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Effect of Precursor Materials on the Properties of Si Doped Boron Carbide.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Effect of Precursor Materials on the Properties of Si Doped Boron Carbide./
作者:	Koelle, Matthew Michael.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2022,
面頁冊數:	48 p.
附註:	Source: Masters Abstracts International, Volume: 83-12.
Contained By:	Masters Abstracts International83-12.
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29063274
ISBN:	9798802704998

Effect of Precursor Materials on the Properties of Si Doped Boron Carbide.
Koelle, Matthew Michael.

Effect of Precursor Materials on the Properties of Si Doped Boron Carbide. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 48 p.

Source: Masters Abstracts International, Volume: 83-12.

Thesis (M.S.)--Rutgers The State University of New Jersey, School of Graduate Studies, 2022.

This item must not be sold to any third party vendors.

Boron carbide is a ceramic notable for its high hardness and low density. Silicon is commonly used to dope boron carbide in order to increase its resistance to failure by amorphization. These doped materials are commonly manufactured with high purity boron and silicon hexaboride as precursor powders, but these materials suffer from high costs and limited supply chains. This research shows that substituting for boron of lower purity or utilizing pure Si powder instead of SiB6 does not have a significant effect on critical properties such as fracture toughness or amorphization resistance. Small increases in hardness were reported for samples fabricated with SiB6 compared to Si, but the differences were not statistically significant. The only measured physical properties showing significant differences were with respect to doping and elastic modulus of the material. Samples prepared with Si instead of SiB6 showed decreased Si doping after hot pressing, however this difference does not exist for samples prepared via spark plasma sintering so altering sintering parameters can alleviate this difference. The Young's modulus was significantly lower for materials prepared with lower purity boron as well as samples using Si instead of SiB6 as the silicon source. These findings indicate that substitution of precursor materials in Si doped boron carbide is possible with very little change to the properties of the material. This allows for the usage of more economically available and cheaper production pathways for silicon doped boron carbide products.

ISBN: 9798802704998Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Boron carbide

Effect of Precursor Materials on the Properties of Si Doped Boron Carbide.
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245 1 0 $a Effect of Precursor Materials on the Properties of Si Doped Boron Carbide.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 48 p.
500 $a Source: Masters Abstracts International, Volume: 83-12.
500 $a Advisor: Haber, Richard A.
502 $a Thesis (M.S.)--Rutgers The State University of New Jersey, School of Graduate Studies, 2022.
506 $a This item must not be sold to any third party vendors.
520 $a Boron carbide is a ceramic notable for its high hardness and low density. Silicon is commonly used to dope boron carbide in order to increase its resistance to failure by amorphization. These doped materials are commonly manufactured with high purity boron and silicon hexaboride as precursor powders, but these materials suffer from high costs and limited supply chains. This research shows that substituting for boron of lower purity or utilizing pure Si powder instead of SiB6 does not have a significant effect on critical properties such as fracture toughness or amorphization resistance. Small increases in hardness were reported for samples fabricated with SiB6 compared to Si, but the differences were not statistically significant. The only measured physical properties showing significant differences were with respect to doping and elastic modulus of the material. Samples prepared with Si instead of SiB6 showed decreased Si doping after hot pressing, however this difference does not exist for samples prepared via spark plasma sintering so altering sintering parameters can alleviate this difference. The Young's modulus was significantly lower for materials prepared with lower purity boron as well as samples using Si instead of SiB6 as the silicon source. These findings indicate that substitution of precursor materials in Si doped boron carbide is possible with very little change to the properties of the material. This allows for the usage of more economically available and cheaper production pathways for silicon doped boron carbide products.
590 $a School code: 0190.
650 4 $a Materials science. $3 543314
650 4 $a Molecular physics. $3 3174737
650 4 $a Mechanical engineering. $3 649730
653 $a Boron carbide
653 $a High hardness low density
653 $a Silicon doped boron carbide
653 $a Silicon hexaboride
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793 $a English
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