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Heteroepitaxial growth of gallium selenium compounds on silicon.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Heteroepitaxial growth of gallium selenium compounds on silicon./
作者:	Meng, Shuang.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2000,
面頁冊數:	128 p.
附註:	Source: Dissertations Abstracts International, Volume: 62-11, Section: B.
Contained By:	Dissertations Abstracts International62-11B.
標題:	Condensation. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9995412
ISBN:	9780493040851

Heteroepitaxial growth of gallium selenium compounds on silicon.
Meng, Shuang.

Heteroepitaxial growth of gallium selenium compounds on silicon. - Ann Arbor : ProQuest Dissertations & Theses, 2000 - 128 p.

Source: Dissertations Abstracts International, Volume: 62-11, Section: B.

Thesis (Ph.D.)--University of Washington, 2000.

This item must not be sold to any third party vendors.

Gallium selenium compounds, including the layered GaSe and the cubic Ga2Se3, are III-VI based semiconductors that hold significant promise for development as new device materials. These materials have band gaps and lattice constants similar to those of many more common electronic materials, but exhibit structural versatility and optoelectronic non-linearity that are uncommon in more traditional semiconducting materials. This thesis work focuses on epitaxial growth of Ga-Se compounds on Si(111) and (100) surfaces, using a combination of in situ and ex situ analysis techniques including low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy and diffraction (XPS/XPD) and transmission electron microscopy (TEM). We have found that deposition of GaSe on Si(111) 7 x 7 at high temperatures (above 500°C) results in passivation of the surface by a single, unreconstructed GaSe bilayer. The resultant Si(111):GaSe-1 x 1 structure, with Si-Ga bonds and surface Se lone-pair states, is a fully coordinated surface, similar to Si(111):As or Si(111):H. We have acquired a comprehensive understanding of this structure, including complete bonding geometries and structural parameters, through photoelectron diffraction measurements combined with theoretical multiple-scattering calculations. This simple structure also displays a surprisingly strong angular variation of the Ga 3d photoemission spin-orbit branching ratio, and provides a model system to study relativistic effects in photoelectron spectroscopy. We achieved thicker crystalline film growths on both Si(111) and (100) in the substrate temperature range from 425 to 470°C. However, As passivation of Si(I00) is required prior to deposition to facilitate crystalline growth. The grown films were studied by photoelectron diffraction at various thicknesses to monitor the evolution of epitaxy. Ex situ high-resolution TEM further provides information on lattice structures as well as defects in the epitaxial layers. On both Si(111) and (100) surfaces, we obtained strong evidence that cubic structures form in the epitaxial films, however, with some growths indicating Ga-rich conditions.

ISBN: 9780493040851Subjects--Topical Terms:

942542
Condensation.
Subjects--Index Terms:

Gallium selenium

Heteroepitaxial growth of gallium selenium compounds on silicon.
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520 $a Gallium selenium compounds, including the layered GaSe and the cubic Ga2Se3, are III-VI based semiconductors that hold significant promise for development as new device materials. These materials have band gaps and lattice constants similar to those of many more common electronic materials, but exhibit structural versatility and optoelectronic non-linearity that are uncommon in more traditional semiconducting materials. This thesis work focuses on epitaxial growth of Ga-Se compounds on Si(111) and (100) surfaces, using a combination of in situ and ex situ analysis techniques including low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy and diffraction (XPS/XPD) and transmission electron microscopy (TEM). We have found that deposition of GaSe on Si(111) 7 x 7 at high temperatures (above 500°C) results in passivation of the surface by a single, unreconstructed GaSe bilayer. The resultant Si(111):GaSe-1 x 1 structure, with Si-Ga bonds and surface Se lone-pair states, is a fully coordinated surface, similar to Si(111):As or Si(111):H. We have acquired a comprehensive understanding of this structure, including complete bonding geometries and structural parameters, through photoelectron diffraction measurements combined with theoretical multiple-scattering calculations. This simple structure also displays a surprisingly strong angular variation of the Ga 3d photoemission spin-orbit branching ratio, and provides a model system to study relativistic effects in photoelectron spectroscopy. We achieved thicker crystalline film growths on both Si(111) and (100) in the substrate temperature range from 425 to 470°C. However, As passivation of Si(I00) is required prior to deposition to facilitate crystalline growth. The grown films were studied by photoelectron diffraction at various thicknesses to monitor the evolution of epitaxy. Ex situ high-resolution TEM further provides information on lattice structures as well as defects in the epitaxial layers. On both Si(111) and (100) surfaces, we obtained strong evidence that cubic structures form in the epitaxial films, however, with some growths indicating Ga-rich conditions.
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