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Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications./
作者:	Lee, Sungchul.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 1993,
面頁冊數:	197 p.
附註:	Source: Dissertations Abstracts International, Volume: 55-05, Section: B.
Contained By:	Dissertations Abstracts International55-05B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9333323
ISBN:	9798209169284

Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications.
Lee, Sungchul.

Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications. - Ann Arbor : ProQuest Dissertations & Theses, 1993 - 197 p.

Source: Dissertations Abstracts International, Volume: 55-05, Section: B.

Thesis (Ph.D.)--The University of Arizona, 1993.

This item must not be added to any third party search indexes.

Recently, significant progress has been made in integrating ferroelectric materials and semiconductor technology to achieve high density, semiconductor memories. The hysteresis behavior of the polarization versus the electric field and high dielectric constant of ferroelectric materials are useful for non-volatile and dynamic random access memories (DRAMs), respectively. Lead Zirconate-Titanate (Pb(Zr,Ti)O$\\sb3),$ commonly called PZT, is considered to be potentially important in memory applications. PZT is the ferroelectric material studied here. In this dissertation, the measurement methods for polarization and current-voltage characteristics of ferroelectric thin films are investigated. A new method for measuring current-voltage characteristics of ferroelectric materials is developed to distinguish the leakage current from the switching current. Further, the reliability concerns for ferroelectric memories, such as fatigue, retention, and temperature effect, are discussed based on the polarization and leakage-current characteristics of sol-gel derived PZT thin films. In addition to the studies on the charge storage capability, a model of the ferroelectric thin films is presented. Considering the spontaneous polarization of the ferroelectric film, a back-to-back Schottky barrier system having asymmetric barriers is proposed as a model for the platinum-PZT-platinum capacitor. The potential and electric field distributions in PZT thin films are calculated by solving Poisson's equation numerically for different doping concentrations. In this analysis, the permittivity variation with respect to the electric field is considered. Based on these numerical results, capacitance-voltage characteristics of the PZT thin film capacitor are predicted. For a doping concentration of 1 $\imes$ 10$\\sp $ cm$\\sp{-3}$ and the maximum relative permittivity of $\\sim$8000, the calculated C-V curve fits well with the experimental result.

ISBN: 9798209169284Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

semiconductor memory

Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications.
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245 1 0 $a Characterization of lead zirconate titanate (PZT) thin films for ferroelectric memory applications.
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300 $a 197 p.
500 $a Source: Dissertations Abstracts International, Volume: 55-05, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Schrimpf, Ronald D.
502 $a Thesis (Ph.D.)--The University of Arizona, 1993.
506 $a This item must not be added to any third party search indexes.
506 $a This item must not be sold to any third party vendors.
520 $a Recently, significant progress has been made in integrating ferroelectric materials and semiconductor technology to achieve high density, semiconductor memories. The hysteresis behavior of the polarization versus the electric field and high dielectric constant of ferroelectric materials are useful for non-volatile and dynamic random access memories (DRAMs), respectively. Lead Zirconate-Titanate (Pb(Zr,Ti)O$\\sb3),$ commonly called PZT, is considered to be potentially important in memory applications. PZT is the ferroelectric material studied here. In this dissertation, the measurement methods for polarization and current-voltage characteristics of ferroelectric thin films are investigated. A new method for measuring current-voltage characteristics of ferroelectric materials is developed to distinguish the leakage current from the switching current. Further, the reliability concerns for ferroelectric memories, such as fatigue, retention, and temperature effect, are discussed based on the polarization and leakage-current characteristics of sol-gel derived PZT thin films. In addition to the studies on the charge storage capability, a model of the ferroelectric thin films is presented. Considering the spontaneous polarization of the ferroelectric film, a back-to-back Schottky barrier system having asymmetric barriers is proposed as a model for the platinum-PZT-platinum capacitor. The potential and electric field distributions in PZT thin films are calculated by solving Poisson's equation numerically for different doping concentrations. In this analysis, the permittivity variation with respect to the electric field is considered. Based on these numerical results, capacitance-voltage characteristics of the PZT thin film capacitor are predicted. For a doping concentration of 1 $\imes$ 10$\\sp $ cm$\\sp{-3}$ and the maximum relative permittivity of $\\sim$8000, the calculated C-V curve fits well with the experimental result.
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