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Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering./
Author:	LeBoeuf, Steven Francis.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2001,
Description:	185 p.
Notes:	Source: Dissertations Abstracts International, Volume: 63-04, Section: B.
Contained By:	Dissertations Abstracts International63-04B.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3016291
ISBN:	9780493268552

Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering.
LeBoeuf, Steven Francis.

Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering. - Ann Arbor : ProQuest Dissertations & Theses, 2001 - 185 p.

Source: Dissertations Abstracts International, Volume: 63-04, Section: B.

Thesis (Ph.D.)--North Carolina State University, 2001.

This item must not be sold to any third party vendors.

AlxInyGa1−x−yN quaternary alloys with 0 < x < 0.26 and 0 < y < 0.15 were grown in a modified Thomas Swan MOCVD reactor. The growth of uniform, high-quality quaternary alloys required relatively high growth temperatures (T > 870°C), high gallium flow rates (>1.5 μmols/min), and high ammonia flows (4 slm). Quaternary growth at non-optimal growth conditions sometimes resulted in the formation of self-assembled superlattices (SASLs), with alternating layers of high and low Al+In content. It was found that the band gap and lattice constant of uniform AlInGaN films can be controlled independently for a finite range of compositions. This has allowed, for the first and only time in reported literature, the growth of InGaN quantum wells (QWs) subject to a full range of pseudomorphic strain (compressive, tensile, and no strain). Capacitance-voltage (C-V) measurements show that the 2DEG properties in strained and unstrained heterostructures are markedly different. Depending on the type of strain, AlInGaN cladding can either enhance or reduce the 2DEG density in InGaN QWs. Similarly, the photoluminescence (PL) intensity of InGaN QWs is highly dependent on strain, with unstrained QWs showing much higher light emission than their strained counterparts. These observations can be explained by accounting for the effects of strain-induced piezoelectric fields, which are expected to be particularly high in III-V nitrides. Indeed, self-consistent calculations of strained and unstrained InGaN QWs, accounting for the effects of strain-induced polarization, closely match the optical and electrical characterization presented in this thesis. Strain-induced polarization can have a particularly strong effect on the device properties of heterostructure field-effect transistors (HFETs). Self-consistent modeling, combined with data acquired in the lab, suggests that AlInGaN quaternary barrier layers can be used to enhance the 2DEG density in GaN-based HFETs beyond that achievable with current ternary technology. C-V carrier profiling of various III-nitride HFET structures has shown that AlInGaN strain engineering can enhance 2DEG density, reduce leakage current, deter the formation of parasitic conducting channels, and alter threshold voltage.

ISBN: 9780493268552Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Aluminum-indium-gallium-nitride

Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering.
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245 1 0 $a Manipulating two-dimensional electron gas properties in III-V nitrides aluminum indium gallium nitride strain engineering.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2001
300 $a 185 p.
500 $a Source: Dissertations Abstracts International, Volume: 63-04, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Bedair, Salah M.
502 $a Thesis (Ph.D.)--North Carolina State University, 2001.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a AlxInyGa1−x−yN quaternary alloys with 0 < x < 0.26 and 0 < y < 0.15 were grown in a modified Thomas Swan MOCVD reactor. The growth of uniform, high-quality quaternary alloys required relatively high growth temperatures (T > 870°C), high gallium flow rates (>1.5 μmols/min), and high ammonia flows (4 slm). Quaternary growth at non-optimal growth conditions sometimes resulted in the formation of self-assembled superlattices (SASLs), with alternating layers of high and low Al+In content. It was found that the band gap and lattice constant of uniform AlInGaN films can be controlled independently for a finite range of compositions. This has allowed, for the first and only time in reported literature, the growth of InGaN quantum wells (QWs) subject to a full range of pseudomorphic strain (compressive, tensile, and no strain). Capacitance-voltage (C-V) measurements show that the 2DEG properties in strained and unstrained heterostructures are markedly different. Depending on the type of strain, AlInGaN cladding can either enhance or reduce the 2DEG density in InGaN QWs. Similarly, the photoluminescence (PL) intensity of InGaN QWs is highly dependent on strain, with unstrained QWs showing much higher light emission than their strained counterparts. These observations can be explained by accounting for the effects of strain-induced piezoelectric fields, which are expected to be particularly high in III-V nitrides. Indeed, self-consistent calculations of strained and unstrained InGaN QWs, accounting for the effects of strain-induced polarization, closely match the optical and electrical characterization presented in this thesis. Strain-induced polarization can have a particularly strong effect on the device properties of heterostructure field-effect transistors (HFETs). Self-consistent modeling, combined with data acquired in the lab, suggests that AlInGaN quaternary barrier layers can be used to enhance the 2DEG density in GaN-based HFETs beyond that achievable with current ternary technology. C-V carrier profiling of various III-nitride HFET structures has shown that AlInGaN strain engineering can enhance 2DEG density, reduce leakage current, deter the formation of parasitic conducting channels, and alter threshold voltage.
590 $a School code: 0155.
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650 4 $a Condensation. $3 942542
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653 $a Aluminum-indium-gallium-nitride
653 $a Electron gas
653 $a Nitrides
653 $a Piezoelectric
653 $a Strain engineering
653 $a Two-dimensional
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710 2 $a North Carolina State University. $3 1018772
773 0 $t Dissertations Abstracts International $g 63-04B.
790 $a 0155
791 $a Ph.D.
792 $a 2001
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3016291