東華大學圖書館 |

Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods./
作者:	Yassitepe, Emre.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2012,
面頁冊數:	117 p.
附註:	Source: Dissertations Abstracts International, Volume: 74-09, Section: B.
Contained By:	Dissertations Abstracts International74-09B.
標題:	Inorganic chemistry. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3555457
ISBN:	9781267970213

Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods.
Yassitepe, Emre.

Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods. - Ann Arbor : ProQuest Dissertations & Theses, 2012 - 117 p.

Source: Dissertations Abstracts International, Volume: 74-09, Section: B.

Thesis (Ph.D.)--University of Delaware, 2012.

Photovoltaics is a highly attractive field due to the expectation of delivering cheap, reusable and inexhaustible clean energy. Among the various solar cell materials, the Cu(In,Ga)Se2 family of chalcopyrites are of much interest because of their highly attractive material properties including band gap and absorption coefficient. Preparation of this material has been investigated by various techniques for the eventual fabrication of solar cells. It is beneficial to have a good understanding of the Cu(In,Ga)Se 2 formation reactions that can form high quality absorber layer with reduced manufacturing cost. In this thesis the formation reactions of a series of synthetic techniques are studied by relating physical properties of the Cu-In-Ga-Se systems and combining them with the experimentally obtained data. The formation reactions during the synthesis of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition techniques are investigated. Nanoparticles and/or bulk-like particles are formed by reacting elemental precursors in ethylenediamine and triethylenetetramine solvents under by varying synthesis temperature and duration. The results show that the formation reaction of CuInSe2 is relatively slower than the formation of CuIn 0.7Ga0.3Se2 and this is attributed to smaller ionic radii of Ga and lesser equilibrium phases of Ga-Se system compared to In-Se system. To achieve a better understanding of the reaction pathways sonochemistry technique is used to homogenize and react elemental precursors. Sonochemistry technique has the advantage for creating fine dispersions of particles. After the sonication the suspension can be dried of to study formation pathway of the Cu(In,Ga)Se2 by annealing. For sonochemistry reactions, three preselected solvents were investigated by sonicating Cu and Se precursors in each solvent followed by the selection of the solvent that shows the fastest reaction. Results showed that rapid selenization reactions take place in two minutes with 2-cyanopyridine solvent due to the removal of surface oxide from the precursors, as confirmed by XPS analysis. For studying the CuInSe2, CuGaSe2 and Cu(In,Ga)Se 2 formation reactions, the precursors are sonicated, combined stoichiometrically, and finally annealed in Ar(95%) - H2(5%) atmosphere. The effective heat of formation (EHF) model is used to predict the binary phase formation sequences and the model is found to be in agreement with the experimentally obtained data for as-sonicated and post-synthesis annealed samples. A crystallographic relation model is proposed with the purpose of determining the reduced activation energy and suppressed reactions for the formation of Cu(In,Ga)Se2. In order to identify this relation first, the predominant crystal facets of reactant phases are predicted by using Bravais-Niggli-Donna-Harker (BNDH) law. Second, crystallographic relations between the predominant crystal facets of the reactant phases are analyzed such as to find if they are suitable for epitaxy. It is proposed that when the reactant phases are found to be structurally similar and a lattice mismatch is <10%, the formation reaction is expected to have reduced activation energy otherwise the formation reaction is suppressed. The experimentally obtained results show that it is in complete agreement with crystallographic relation model. Based on this model, another reason for Ga phase separation in thin film reactions is addressed due to the suppressed reaction pathways and these findings are supported by the experimental results. Finally, Cu-In-O thin films are prepared by sputter deposition technique under different substrate temperatures and using different sputtering targets to study the selenization reactions of the prepared oxide thin films. XRD results showed In2O3 phase is detected in all films but Cu phase is only detected higher substrate temperatures. In2O 3 phase is found to be in different crystal orientations depending on the substrate temperature (300°C and 500°C). This is due to a templated growth between Cu and In2O3 phases, creating texturing in In2O3 phase. Additionally the selenization reactions showed that textured films affected the diffusion of Se in the sample, as revealed by the XRD results.

ISBN: 9781267970213Subjects--Topical Terms:

3173556
Inorganic chemistry.
Subjects--Index Terms:

Cuingase2

Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods.
LDR:05559nmm a2200397 4500 001 2347811
005 20230509065508.5
006 m o d
007 cr#unu||||||||
008 241004s2012 ||||||||||||||||| ||eng d
020 $a 9781267970213
035 $a (MiAaPQ)AAI3555457
035 $a (MiAaPQ)udel:11116
035 $a AAI3555457
040 $a MiAaPQ $c MiAaPQ
100 1 $a Yassitepe, Emre. $3 3687110
245 1 0 $a Structural and morphological investigations on the formation of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition methods.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2012
300 $a 117 p.
500 $a Source: Dissertations Abstracts International, Volume: 74-09, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Shah, Syed I.
502 $a Thesis (Ph.D.)--University of Delaware, 2012.
520 $a Photovoltaics is a highly attractive field due to the expectation of delivering cheap, reusable and inexhaustible clean energy. Among the various solar cell materials, the Cu(In,Ga)Se2 family of chalcopyrites are of much interest because of their highly attractive material properties including band gap and absorption coefficient. Preparation of this material has been investigated by various techniques for the eventual fabrication of solar cells. It is beneficial to have a good understanding of the Cu(In,Ga)Se 2 formation reactions that can form high quality absorber layer with reduced manufacturing cost. In this thesis the formation reactions of a series of synthetic techniques are studied by relating physical properties of the Cu-In-Ga-Se systems and combining them with the experimentally obtained data. The formation reactions during the synthesis of Cu(In,Ga)Se2 by solvothermal, sonochemistry and sputter deposition techniques are investigated. Nanoparticles and/or bulk-like particles are formed by reacting elemental precursors in ethylenediamine and triethylenetetramine solvents under by varying synthesis temperature and duration. The results show that the formation reaction of CuInSe2 is relatively slower than the formation of CuIn 0.7Ga0.3Se2 and this is attributed to smaller ionic radii of Ga and lesser equilibrium phases of Ga-Se system compared to In-Se system. To achieve a better understanding of the reaction pathways sonochemistry technique is used to homogenize and react elemental precursors. Sonochemistry technique has the advantage for creating fine dispersions of particles. After the sonication the suspension can be dried of to study formation pathway of the Cu(In,Ga)Se2 by annealing. For sonochemistry reactions, three preselected solvents were investigated by sonicating Cu and Se precursors in each solvent followed by the selection of the solvent that shows the fastest reaction. Results showed that rapid selenization reactions take place in two minutes with 2-cyanopyridine solvent due to the removal of surface oxide from the precursors, as confirmed by XPS analysis. For studying the CuInSe2, CuGaSe2 and Cu(In,Ga)Se 2 formation reactions, the precursors are sonicated, combined stoichiometrically, and finally annealed in Ar(95%) - H2(5%) atmosphere. The effective heat of formation (EHF) model is used to predict the binary phase formation sequences and the model is found to be in agreement with the experimentally obtained data for as-sonicated and post-synthesis annealed samples. A crystallographic relation model is proposed with the purpose of determining the reduced activation energy and suppressed reactions for the formation of Cu(In,Ga)Se2. In order to identify this relation first, the predominant crystal facets of reactant phases are predicted by using Bravais-Niggli-Donna-Harker (BNDH) law. Second, crystallographic relations between the predominant crystal facets of the reactant phases are analyzed such as to find if they are suitable for epitaxy. It is proposed that when the reactant phases are found to be structurally similar and a lattice mismatch is <10%, the formation reaction is expected to have reduced activation energy otherwise the formation reaction is suppressed. The experimentally obtained results show that it is in complete agreement with crystallographic relation model. Based on this model, another reason for Ga phase separation in thin film reactions is addressed due to the suppressed reaction pathways and these findings are supported by the experimental results. Finally, Cu-In-O thin films are prepared by sputter deposition technique under different substrate temperatures and using different sputtering targets to study the selenization reactions of the prepared oxide thin films. XRD results showed In2O3 phase is detected in all films but Cu phase is only detected higher substrate temperatures. In2O 3 phase is found to be in different crystal orientations depending on the substrate temperature (300°C and 500°C). This is due to a templated growth between Cu and In2O3 phases, creating texturing in In2O3 phase. Additionally the selenization reactions showed that textured films affected the diffusion of Se in the sample, as revealed by the XRD results.
590 $a School code: 0060.
650 4 $a Inorganic chemistry. $3 3173556
650 4 $a Materials science. $3 543314
653 $a Cuingase2
653 $a Solid state reactions
653 $a Solvothermal methods
653 $a Sonochemistry
653 $a Sputter deposition
690 $a 0488
690 $a 0794
710 2 $a University of Delaware. $b Department of Materials Science and Engineering. $3 1017764
773 0 $t Dissertations Abstracts International $g 74-09B.
790 $a 0060
791 $a Ph.D.
792 $a 2012
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3555457