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Electrochemical Atomic Layer Etching of Copper and Ruthenium.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electrochemical Atomic Layer Etching of Copper and Ruthenium./
作者:	Gong, Yukun.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	121 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
Contained By:	Dissertations Abstracts International83-05B.
標題:	Nanotechnology. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28830400
ISBN:	9798460402830

Electrochemical Atomic Layer Etching of Copper and Ruthenium.
Gong, Yukun.

Electrochemical Atomic Layer Etching of Copper and Ruthenium. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 121 p.

Source: Dissertations Abstracts International, Volume: 83-05, Section: B.

Thesis (Ph.D.)--Case Western Reserve University, 2021.

This item must not be sold to any third party vendors.

Due to an increasing need for atomic-scale tailoring of materials in various applications such as advanced semiconductor processing, atomic layer etching (ALE) is critically needed in order to achieve atomic-level control over etching. Existing vapor-phase, plasma-assisted etching processes do not provide such atomic-scale control in the etching process. Other drawbacks associated with plasma etching techniques include contamination of surfaces and the generation of toxic gaseous byproducts. To address these issues, electrochemical atomic layer etching (e-ALE) utilizing benign liquid-phase chemistry in combination with electrode potential manipulation is developed herein. Electrochemical ALE enables atomically-precise tailoring of surfaces.In the present work, novel e-ALE processes for copper (Cu) and ruthenium (Ru) are demonstrated. A two-step process for etching one metal atomic layer per e-ALE cycle is utilized, where the surface monolayer of the bulk metal film is first oxidized followed by selective etching of the oxidized monolayer without etching the underlying metal. Performing these two steps sequentially enables the removal of metal films in a true ALE mode, i.e., one atomic layer at a time. Surface roughness is not amplified during etching thereby providing the atomic-level precision required in applications. The e-ALE process is advantageous over conventional vapor-phase processes for the following reasons: (i) e-ALE generates stable aquo-complexes which do not contaminate the metal surface; (ii) e-ALE reduces the system complexity and cost and increases throughput in comparison with conventional plasma-assisted etching processes.Layer-by-layer etching of Cu and Ru is experimentally confirmed using electrochemical and microscopic methods. In e-ALE of Cu, through thermodynamic considerations of the Cu surface-limited sulfidization reaction, the optimal sulfidization potential is determined at which surface roughness of Cu is not significantly amplified during etching. Such thermodynamic considerations provide a theory-guided approach for the design of e-ALE sequences.

ISBN: 9798460402830Subjects--Topical Terms:

526235
Nanotechnology.
Subjects--Index Terms:

Selective etching

Electrochemical Atomic Layer Etching of Copper and Ruthenium.
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245 1 0 $a Electrochemical Atomic Layer Etching of Copper and Ruthenium.
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300 $a 121 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
500 $a Advisor: Akolkar, Rohan.
502 $a Thesis (Ph.D.)--Case Western Reserve University, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Due to an increasing need for atomic-scale tailoring of materials in various applications such as advanced semiconductor processing, atomic layer etching (ALE) is critically needed in order to achieve atomic-level control over etching. Existing vapor-phase, plasma-assisted etching processes do not provide such atomic-scale control in the etching process. Other drawbacks associated with plasma etching techniques include contamination of surfaces and the generation of toxic gaseous byproducts. To address these issues, electrochemical atomic layer etching (e-ALE) utilizing benign liquid-phase chemistry in combination with electrode potential manipulation is developed herein. Electrochemical ALE enables atomically-precise tailoring of surfaces.In the present work, novel e-ALE processes for copper (Cu) and ruthenium (Ru) are demonstrated. A two-step process for etching one metal atomic layer per e-ALE cycle is utilized, where the surface monolayer of the bulk metal film is first oxidized followed by selective etching of the oxidized monolayer without etching the underlying metal. Performing these two steps sequentially enables the removal of metal films in a true ALE mode, i.e., one atomic layer at a time. Surface roughness is not amplified during etching thereby providing the atomic-level precision required in applications. The e-ALE process is advantageous over conventional vapor-phase processes for the following reasons: (i) e-ALE generates stable aquo-complexes which do not contaminate the metal surface; (ii) e-ALE reduces the system complexity and cost and increases throughput in comparison with conventional plasma-assisted etching processes.Layer-by-layer etching of Cu and Ru is experimentally confirmed using electrochemical and microscopic methods. In e-ALE of Cu, through thermodynamic considerations of the Cu surface-limited sulfidization reaction, the optimal sulfidization potential is determined at which surface roughness of Cu is not significantly amplified during etching. Such thermodynamic considerations provide a theory-guided approach for the design of e-ALE sequences.
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793 $a English
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