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Electromigration in metals = fundame...

Ho, Paul S.

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Electromigration in metals = fundamentals to nano-interconnects /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electromigration in metals/ Paul S. Ho ... [et al.].
Reminder of title:	fundamentals to nano-interconnects /
other author:	Ho, Paul S.
Published:	Cambridge ; New York, NY :Cambridge University Pres, : 2022.,
Description:	xiii, 417 p. :ill., digital ;25 cm.
Notes:	Title from publisher's bibliographic system (viewed on 07 Apr 2022).
[NT 15003449]:	Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
Subject:	Interconnects (Integrated circuit technology) - Materials. -
Online resource:	https://doi.org/10.1017/9781139505819
ISBN:	9781139505819

Electromigration in metals = fundamentals to nano-interconnects /
Electromigration in metalsfundamentals to nano-interconnects /[electronic resource] :Paul S. Ho ... [et al.]. - Cambridge ; New York, NY :Cambridge University Pres,2022. - xiii, 417 p. :ill., digital ;25 cm.

Title from publisher's bibliographic system (viewed on 07 Apr 2022).

Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

ISBN: 9781139505819Subjects--Topical Terms:

3645675
Interconnects (Integrated circuit technology)
--Materials.

LC Class. No.: TK7874.53

Dewey Class. No.: 621.3815

Electromigration in metals = fundamentals to nano-interconnects /
LDR:02357nmm a2200253 a 4500 001 2324443
003 UkCbUP
005 20220511093257.0
006 m d
007 cr nn 008maaau
008 231215s2022 enk o 1 0 eng d
020 $a 9781139505819 $q (electronic bk.)
020 $a 9781107032385 $q (hardback)
035 $a CR9781139505819
040 $a UkCbUP $b eng $c UkCbUP $d GP
050 0 0 $a TK7874.53
082 0 0 $a 621.3815 $2 23
090 $a TK7874.53 $b .E38 2022
245 0 0 $a Electromigration in metals $h [electronic resource] : $b fundamentals to nano-interconnects / $c Paul S. Ho ... [et al.].
260 $a Cambridge ; New York, NY : $b Cambridge University Pres, $c 2022.
300 $a xiii, 417 p. : $b ill., digital ; $c 25 cm.
500 $a Title from publisher's bibliographic system (viewed on 07 Apr 2022).
505 0 $a Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
520 $a Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
650 0 $a Interconnects (Integrated circuit technology) $x Materials. $3 3645675
650 0 $a Metals $x Electric properties. $3 653698
650 0 $a Electrodiffusion. $3 649354
700 1 $a Ho, Paul S. $3 3645674
856 4 0 $u https://doi.org/10.1017/9781139505819