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Differentiated layout styles for MOS...

Gimenez, Salvador Pinillos.

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Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Differentiated layout styles for MOSFETs/ by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck.
其他題名:	electrical behavior in harsh environments /
作者:	Gimenez, Salvador Pinillos.
其他作者:	Galembeck, Egon Henrique Salerno.
出版者:	Cham :Springer International Publishing : : 2023.,
面頁冊數:	1 online resource (vii, 216 p.) :ill., digital ;24 cm.
內容註:	Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
Contained By:	Springer Nature eBook
標題:	Metal oxide semiconductor field-effect transistors. -
電子資源:	https://doi.org/10.1007/978-3-031-29086-2
ISBN:	9783031290862

Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /
Gimenez, Salvador Pinillos.

Differentiated layout styles for MOSFETselectrical behavior in harsh environments /[electronic resource] :by Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck. - Cham :Springer International Publishing :2023. - 1 online resource (vii, 216 p.) :ill., digital ;24 cm.

Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.

ISBN: 9783031290862

Standard No.: 10.1007/978-3-031-29086-2doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Differentiated layout styles for MOSFETs = electrical behavior in harsh environments /
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520 $a This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don't entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
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