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Multigate transistors for high frequ...

Sivasankaran, K.

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Multigate transistors for high frequency applications

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Multigate transistors for high frequency applications/ by K. Sivasankaran, Partha Sharathi Mallick.
作者:	Sivasankaran, K.
其他作者:	Mallick, Partha Sharathi.
出版者:	Singapore :Springer Nature Singapore : : 2023.,
面頁冊數:	xi, 91 p. :ill., digital ;24 cm.
內容註:	1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
Contained By:	Springer Nature eBook
標題:	Metal oxide semiconductor field-effect transistors. -
電子資源:	https://doi.org/10.1007/978-981-99-0157-9
ISBN:	9789819901579

Multigate transistors for high frequency applications
Sivasankaran, K.

Multigate transistors for high frequency applications[electronic resource] /by K. Sivasankaran, Partha Sharathi Mallick. - Singapore :Springer Nature Singapore :2023. - xi, 91 p. :ill., digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.

This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

ISBN: 9789819901579

Standard No.: 10.1007/978-981-99-0157-9doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.3815284

Multigate transistors for high frequency applications
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505 0 $a 1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References.
520 $a This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.
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