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Mm-wave circuit design in 16nm FinFE...

Philippe, Bart.

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Mm-wave circuit design in 16nm FinFET for 6G applications

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Mm-wave circuit design in 16nm FinFET for 6G applications/ by Bart Philippe, Patrick Reynaert.
作者:	Philippe, Bart.
其他作者:	Reynaert, Patrick.
出版者:	Cham :Springer International Publishing : : 2023.,
面頁冊數:	xi, 136 p. :ill. (chiefly color), digital ;24 cm.
內容註:	Introduction -- Basic components in mm-wave design -- Frequency generation -- Power amplification -- A D-band transmitter with enhanced PA -- Conclusion.
Contained By:	Springer Nature eBook
標題:	Millimeter wave devices. -
電子資源:	https://doi.org/10.1007/978-3-031-11224-9
ISBN:	9783031112249

Mm-wave circuit design in 16nm FinFET for 6G applications
Philippe, Bart.

Mm-wave circuit design in 16nm FinFET for 6G applications[electronic resource] /by Bart Philippe, Patrick Reynaert. - Cham :Springer International Publishing :2023. - xi, 136 p. :ill. (chiefly color), digital ;24 cm. - Analog circuits and signal processing,2197-1854. - Analog circuits and signal processing..

Introduction -- Basic components in mm-wave design -- Frequency generation -- Power amplification -- A D-band transmitter with enhanced PA -- Conclusion.

This book tackles the challenges of designing mm-wave circuits in 16nm FinFET, from the elementary transistor level to a measured D-band transmitter. The design of crucial building blocks such as oscillators and power amplifiers are covered through theoretical limitations, design methodology and measurement. Offers first book on design of mm-wave circuits above 100GHz in an advanced 16nm FinFET digital technology; Covers fundamentals of transistor layout, circuit implementation and measurements; Provides single-source reference to information otherwise only available in disparate literature.

ISBN: 9783031112249

Standard No.: 10.1007/978-3-031-11224-9doiSubjects--Topical Terms:

604713
Millimeter wave devices.

LC Class. No.: TK7876.5

Dewey Class. No.: 621.38132

Mm-wave circuit design in 16nm FinFET for 6G applications
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