東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Advanced SPICE model for GaN HEMTs (...

Khandelwal, Sourabh.

Linked to FindBook

Google Book

Amazon

博客來

Advanced SPICE model for GaN HEMTs (ASM-HEMT) = a new industry-standard compact model for GaN-based power and RF circuit design /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Advanced SPICE model for GaN HEMTs (ASM-HEMT)/ by Sourabh Khandelwal.
Reminder of title:	a new industry-standard compact model for GaN-based power and RF circuit design /
Author:	Khandelwal, Sourabh.
Published:	Cham :Springer International Publishing : : 2022.,
Description:	xv, 188 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.
Contained By:	Springer Nature eBook
Subject:	Modulation-doped field-effect transistors. -
Online resource:	https://doi.org/10.1007/978-3-030-77730-2
ISBN:	9783030777302

Advanced SPICE model for GaN HEMTs (ASM-HEMT) = a new industry-standard compact model for GaN-based power and RF circuit design /
Khandelwal, Sourabh.

Advanced SPICE model for GaN HEMTs (ASM-HEMT)a new industry-standard compact model for GaN-based power and RF circuit design /[electronic resource] :by Sourabh Khandelwal. - Cham :Springer International Publishing :2022. - xv, 188 p. :ill., digital ;24 cm.

Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

ISBN: 9783030777302

Standard No.: 10.1007/978-3-030-77730-2doiSubjects--Topical Terms:

3399546
Modulation-doped field-effect transistors.

LC Class. No.: TK7871.95 / .K43 2022

Dewey Class. No.: 621.3815284

Advanced SPICE model for GaN HEMTs (ASM-HEMT) = a new industry-standard compact model for GaN-based power and RF circuit design /
LDR:02615nmm a2200325 a 4500 001 2297240
003 DE-He213
005 20211217115356.0
006 m d
007 cr nn 008maaau
008 230324s2022 sz s 0 eng d
020 $a 9783030777302 $q (electronic bk.)
020 $a 9783030777296 $q (paper)
024 7 $a 10.1007/978-3-030-77730-2 $2 doi
035 $a 978-3-030-77730-2
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95 $b .K43 2022
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .K45 2022
100 1 $a Khandelwal, Sourabh. $3 3592614
245 1 0 $a Advanced SPICE model for GaN HEMTs (ASM-HEMT) $h [electronic resource] : $b a new industry-standard compact model for GaN-based power and RF circuit design / $c by Sourabh Khandelwal.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a xv, 188 p. : $b ill., digital ; $c 24 cm.
505 0 $a Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.
520 $a This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
650 0 $a Modulation-doped field-effect transistors. $3 3399546
650 0 $a Semiconductors. $3 516162
650 0 $a Radio frequency integrated circuits. $3 817181
650 0 $a Gallium nitride. $3 700928
650 1 4 $a Circuits and Systems. $3 896527
650 2 4 $a Cyber-physical systems, IoT. $3 3386699
650 2 4 $a Electronic Circuits and Devices. $3 1245773
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-030-77730-2
950 $a Engineering (SpringerNature-11647)