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Control of Spin Qubits in a Classica...

Bourassa, Alexandre.

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Control of Spin Qubits in a Classical Electronics Material.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Control of Spin Qubits in a Classical Electronics Material./
Author:	Bourassa, Alexandre.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	245 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
Subject:	Quantum physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28264903
ISBN:	9798597062358

Control of Spin Qubits in a Classical Electronics Material.
Bourassa, Alexandre.

Control of Spin Qubits in a Classical Electronics Material. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 245 p.

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--The University of Chicago, 2021.

This item must not be sold to any third party vendors.

Distributing entanglement in a quantum network requires a combination of high-quality photonic interfaces and long-lived quantum memories. The neutral divacancy in silicon carbide (SiC) is a particularly interesting system because it has the potential to combine both of these attributes in a material which can leverage scalable device fabrication techniques from a mature semiconductor industry. Here, we discuss recent advances in using isolated defects in SiC as spin qubits. We show how material engineering can be used to control neighboring nuclear spins and build multi-qubit systems. We then embed this quantum system into classical electronic devices (p-i-n diodes). This simple integration allows us to control the defects' electrical environment and engineer its spin-photon interface. Overall, these results cement defects in SiC as attractive candidates for the development of quantum communication and entanglement distribution technologies.

ISBN: 9798597062358Subjects--Topical Terms:

726746
Quantum physics.
Subjects--Index Terms:

Electronics

Control of Spin Qubits in a Classical Electronics Material.
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245 1 0 $a Control of Spin Qubits in a Classical Electronics Material.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2021
300 $a 245 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
500 $a Advisor: Awschalom, David D.
502 $a Thesis (Ph.D.)--The University of Chicago, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Distributing entanglement in a quantum network requires a combination of high-quality photonic interfaces and long-lived quantum memories. The neutral divacancy in silicon carbide (SiC) is a particularly interesting system because it has the potential to combine both of these attributes in a material which can leverage scalable device fabrication techniques from a mature semiconductor industry. Here, we discuss recent advances in using isolated defects in SiC as spin qubits. We show how material engineering can be used to control neighboring nuclear spins and build multi-qubit systems. We then embed this quantum system into classical electronic devices (p-i-n diodes). This simple integration allows us to control the defects' electrical environment and engineer its spin-photon interface. Overall, these results cement defects in SiC as attractive candidates for the development of quantum communication and entanglement distribution technologies.
590 $a School code: 0330.
650 4 $a Quantum physics. $3 726746
650 4 $a Optics. $3 517925
650 4 $a Materials science. $3 543314
653 $a Electronics
653 $a Quantum information
653 $a Quantum memory
653 $a Silicon Carbide
653 $a Single photons
653 $a Spin defect
690 $a 0599
690 $a 0794
690 $a 0752
710 2 $a The University of Chicago. $b Molecular Engineering. $3 3192669
773 0 $t Dissertations Abstracts International $g 82-10B.
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