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Multiscale Computational Fluid Dynam...

Zhang, Yichi.

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Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control./
Author:	Zhang, Yichi.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	152 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Contained By:	Dissertations Abstracts International82-12B.
Subject:	Chemical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28543774
ISBN:	9798516062063

Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control.
Zhang, Yichi.

Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 152 p.

Source: Dissertations Abstracts International, Volume: 82-12, Section: B.

Thesis (Ph.D.)--University of California, Los Angeles, 2021.

This item must not be sold to any third party vendors.

Facilitated by the increasing importance and demand of semiconductors for the smart phone and even the automobile industry, thermal atomic layer deposition (ALD) has gained tremendous industrial interest as it offers a way to efficiently deposit thin-films with ultra-high conformity. It is chosen largely due to its superior ability to deliver ultra-conformal dielectric thin-films with high aspect-ratio surface structures, which are encountered more and more often in the novel design of metal-oxide-semiconductor field-effect transistors (MOSFETs) in the NAND (Not-And)-type flash memory devices. Based on the traditional thermal ALD method, the plasma enhanced atomic layer deposition (PEALD) allows for lower operating temperature and speeds up the deposition process with the involvement of plasma species. Despite the popularity of these two methods, the development of their operation policies remains a complicated and expensive task, which motivates the construction of an accurate and comprehensive simulation model.A series of studies have been carried out to elucidate the mechanisms and the concept of the PEALD process. In particular, process characterization focuses on the development of a first-principles-based three-dimensional, multiscale computational fluid dynamics (CFD)model, together with reactor geometry optimizations, of SiO2 thin film thermal atomic layer deposition (ALD) using bis(tertiary-butylamino)silane (BTBAS) and ozone as precursors. Also, a comprehensive multiscale computational fluid dynamics (CFD) model incorporating the plasma generation chamber is used in the deposition of HfO2 thin-films utilizing tetrakis(dimethylamido)hafnium (TDMAHf) and O2 plasma as precursors.Despite the great deal of research effort, ALD and PEALD processes have not been fully characterized from the view point of process control. This study aims to use previously developed multiscale CFD simulation model to design and evaluate an optimized control scheme to deal with industrially-relevant disturbances. Specifically, an integrated control scheme using a proportional-integral (PI) controller and a run-to-run (R2R) controller is proposed and evaluated to ensure the deposition of high-quality conformal thin-films. The ALD and PEALD processes under typical disturbances are simulated using the multiscale CFD model, and the integrated controllers are applied in the process domain. Using the controller parameters determined from the open-loop results, the developed integrated PI-R2R controller successfully mitigates the disturbances in there actor with the combined effort of both controllers.

ISBN: 9798516062063Subjects--Topical Terms:

560457
Chemical engineering.
Subjects--Index Terms:

Atomic layer deposition

Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control.
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245 1 0 $a Multiscale Computational Fluid Dynamics Modeling of Thermal and Plasma Atomic Layer Deposition: Application to Chamber Design and Process Control.
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300 $a 152 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
500 $a Advisor: Christofides, Panagiotis D.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Facilitated by the increasing importance and demand of semiconductors for the smart phone and even the automobile industry, thermal atomic layer deposition (ALD) has gained tremendous industrial interest as it offers a way to efficiently deposit thin-films with ultra-high conformity. It is chosen largely due to its superior ability to deliver ultra-conformal dielectric thin-films with high aspect-ratio surface structures, which are encountered more and more often in the novel design of metal-oxide-semiconductor field-effect transistors (MOSFETs) in the NAND (Not-And)-type flash memory devices. Based on the traditional thermal ALD method, the plasma enhanced atomic layer deposition (PEALD) allows for lower operating temperature and speeds up the deposition process with the involvement of plasma species. Despite the popularity of these two methods, the development of their operation policies remains a complicated and expensive task, which motivates the construction of an accurate and comprehensive simulation model.A series of studies have been carried out to elucidate the mechanisms and the concept of the PEALD process. In particular, process characterization focuses on the development of a first-principles-based three-dimensional, multiscale computational fluid dynamics (CFD)model, together with reactor geometry optimizations, of SiO2 thin film thermal atomic layer deposition (ALD) using bis(tertiary-butylamino)silane (BTBAS) and ozone as precursors. Also, a comprehensive multiscale computational fluid dynamics (CFD) model incorporating the plasma generation chamber is used in the deposition of HfO2 thin-films utilizing tetrakis(dimethylamido)hafnium (TDMAHf) and O2 plasma as precursors.Despite the great deal of research effort, ALD and PEALD processes have not been fully characterized from the view point of process control. This study aims to use previously developed multiscale CFD simulation model to design and evaluate an optimized control scheme to deal with industrially-relevant disturbances. Specifically, an integrated control scheme using a proportional-integral (PI) controller and a run-to-run (R2R) controller is proposed and evaluated to ensure the deposition of high-quality conformal thin-films. The ALD and PEALD processes under typical disturbances are simulated using the multiscale CFD model, and the integrated controllers are applied in the process domain. Using the controller parameters determined from the open-loop results, the developed integrated PI-R2R controller successfully mitigates the disturbances in there actor with the combined effort of both controllers.
590 $a School code: 0031.
650 4 $a Chemical engineering. $3 560457
650 4 $a Fluid mechanics. $3 528155
653 $a Atomic layer deposition
653 $a Computational fluid dynamics
653 $a Control
653 $a Kinetic Monte Carlo
653 $a Machine learning
653 $a Plasma enhanced atomic layer deposition
690 $a 0542
690 $a 0204
710 2 $a University of California, Los Angeles. $b Chemical Engineering 0294. $3 2092146
773 0 $t Dissertations Abstracts International $g 82-12B.
790 $a 0031
791 $a Ph.D.
792 $a 2021
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28543774