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Understanding and Manipulating Charg...

Park, Rebecca.

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Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors./
Author:	Park, Rebecca.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	106 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
Subject:	Circuits. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28330450
ISBN:	9798597029238

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.
Park, Rebecca.

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 106 p.

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--Stanford University, 2020.

This item must not be sold to any third party vendors.

The biggest obstacle in introducing new nanomaterials is that innovative techniques and solutions are required to overcome the various challenges. In particular, conventional understandings based on bulk channel materials (i.e. Si) are often not applicable to carbon nanotubes (CNTs) due to their ultrathin (1~2 nm) one-dimensional structure. Additionally, the large surface-to-volume ratio from the one-dimensional structure makes CNTs greatly susceptible to nearby charges. In this dissertation, I will document the new knowledge obtained for understanding the physics behind - and even utilize - the charges surrounding the CNT with a view toward high-performance computing using carbon nanotube field effect transistors (CNFETs). In particular, this thesis presents a study on the following topics in CNFETs:Hysteresis - A pulse-based measurement technique combined with a physics-based model is developed to characterize traps which affect hysteresis in CNFETs. With the insight gained from this work, hysteresis-free CNFETs are fabricated by minimizing the effect of traps onto the CNTs.Subthreshold Swing - Hysteresis-free curves are an important, but often neglected, prerequisite to measuring the subthreshold swing (SS). By continuing our studies using hysteresis-free CNFETs, the source of large SS is identified.Doping - Through a charge transfer doping mechanism, molybdenum oxide (MoOx) heavily dopes the CNTs, but the effect is unstable over time. The gradual change in material properties of MoOx and a method to stabilize the doping strength are investigated.

ISBN: 9798597029238Subjects--Topical Terms:

3555093
Circuits.
Subjects--Index Terms:

Carbon nanotubes

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.
LDR:02866nmm a2200385 4500 001 2281934
005 20210927083433.5
008 220723s2020 ||||||||||||||||| ||eng d
020 $a 9798597029238
035 $a (MiAaPQ)AAI28330450
035 $a (MiAaPQ)STANFORDxj345cj8298
035 $a AAI28330450
040 $a MiAaPQ $c MiAaPQ
100 1 $a Park, Rebecca. $3 3560643
245 1 0 $a Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 106 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
500 $a Advisor: Wong, H. S. Philip;Mitra, Subhasish;Saraswat, Krishna.
502 $a Thesis (Ph.D.)--Stanford University, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a The biggest obstacle in introducing new nanomaterials is that innovative techniques and solutions are required to overcome the various challenges. In particular, conventional understandings based on bulk channel materials (i.e. Si) are often not applicable to carbon nanotubes (CNTs) due to their ultrathin (1~2 nm) one-dimensional structure. Additionally, the large surface-to-volume ratio from the one-dimensional structure makes CNTs greatly susceptible to nearby charges. In this dissertation, I will document the new knowledge obtained for understanding the physics behind - and even utilize - the charges surrounding the CNT with a view toward high-performance computing using carbon nanotube field effect transistors (CNFETs). In particular, this thesis presents a study on the following topics in CNFETs:Hysteresis - A pulse-based measurement technique combined with a physics-based model is developed to characterize traps which affect hysteresis in CNFETs. With the insight gained from this work, hysteresis-free CNFETs are fabricated by minimizing the effect of traps onto the CNTs.Subthreshold Swing - Hysteresis-free curves are an important, but often neglected, prerequisite to measuring the subthreshold swing (SS). By continuing our studies using hysteresis-free CNFETs, the source of large SS is identified.Doping - Through a charge transfer doping mechanism, molybdenum oxide (MoOx) heavily dopes the CNTs, but the effect is unstable over time. The gradual change in material properties of MoOx and a method to stabilize the doping strength are investigated.
590 $a School code: 0212.
650 4 $a Circuits. $3 3555093
650 4 $a Dielectric properties. $3 3560265
650 4 $a Boron. $3 544039
650 4 $a Electrodes. $3 629151
650 4 $a Graphene. $3 1569149
650 4 $a Transistors. $3 713271
650 4 $a Thin films. $3 626403
650 4 $a Carbon. $3 604057
653 $a Carbon nanotubes
653 $a Field effect transistors
653 $a Hysteresis
690 $a 0544
690 $a 0794
690 $a 0652
690 $a 0215
690 $a 0611
710 2 $a Stanford University. $3 754827
773 0 $t Dissertations Abstracts International $g 82-10B.
790 $a 0212
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28330450