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Understanding and Manipulating Charg...

Park, Rebecca.

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Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors./
作者:	Park, Rebecca.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	106 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
標題:	Circuits. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28330450
ISBN:	9798597029238

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.
Park, Rebecca.

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 106 p.

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--Stanford University, 2020.

This item must not be sold to any third party vendors.

The biggest obstacle in introducing new nanomaterials is that innovative techniques and solutions are required to overcome the various challenges. In particular, conventional understandings based on bulk channel materials (i.e. Si) are often not applicable to carbon nanotubes (CNTs) due to their ultrathin (1~2 nm) one-dimensional structure. Additionally, the large surface-to-volume ratio from the one-dimensional structure makes CNTs greatly susceptible to nearby charges. In this dissertation, I will document the new knowledge obtained for understanding the physics behind - and even utilize - the charges surrounding the CNT with a view toward high-performance computing using carbon nanotube field effect transistors (CNFETs). In particular, this thesis presents a study on the following topics in CNFETs:Hysteresis - A pulse-based measurement technique combined with a physics-based model is developed to characterize traps which affect hysteresis in CNFETs. With the insight gained from this work, hysteresis-free CNFETs are fabricated by minimizing the effect of traps onto the CNTs.Subthreshold Swing - Hysteresis-free curves are an important, but often neglected, prerequisite to measuring the subthreshold swing (SS). By continuing our studies using hysteresis-free CNFETs, the source of large SS is identified.Doping - Through a charge transfer doping mechanism, molybdenum oxide (MoOx) heavily dopes the CNTs, but the effect is unstable over time. The gradual change in material properties of MoOx and a method to stabilize the doping strength are investigated.

ISBN: 9798597029238Subjects--Topical Terms:

3555093
Circuits.
Subjects--Index Terms:

Carbon nanotubes

Understanding and Manipulating Charges Surrounding Carbon Nanotubes: A Step Towards High-Performance Computing with Carbone Nanotube Transistors.
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520 $a The biggest obstacle in introducing new nanomaterials is that innovative techniques and solutions are required to overcome the various challenges. In particular, conventional understandings based on bulk channel materials (i.e. Si) are often not applicable to carbon nanotubes (CNTs) due to their ultrathin (1~2 nm) one-dimensional structure. Additionally, the large surface-to-volume ratio from the one-dimensional structure makes CNTs greatly susceptible to nearby charges. In this dissertation, I will document the new knowledge obtained for understanding the physics behind - and even utilize - the charges surrounding the CNT with a view toward high-performance computing using carbon nanotube field effect transistors (CNFETs). In particular, this thesis presents a study on the following topics in CNFETs:Hysteresis - A pulse-based measurement technique combined with a physics-based model is developed to characterize traps which affect hysteresis in CNFETs. With the insight gained from this work, hysteresis-free CNFETs are fabricated by minimizing the effect of traps onto the CNTs.Subthreshold Swing - Hysteresis-free curves are an important, but often neglected, prerequisite to measuring the subthreshold swing (SS). By continuing our studies using hysteresis-free CNFETs, the source of large SS is identified.Doping - Through a charge transfer doping mechanism, molybdenum oxide (MoOx) heavily dopes the CNTs, but the effect is unstable over time. The gradual change in material properties of MoOx and a method to stabilize the doping strength are investigated.
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