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Growth of Atomically-Flat Si/SiGe He...

Huo, Weiguang.

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Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition./
Author:	Huo, Weiguang.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	147 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
Contained By:	Dissertations Abstracts International82-12B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28495568
ISBN:	9798505539576

Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
Huo, Weiguang.

Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 147 p.

Source: Dissertations Abstracts International, Volume: 82-12, Section: B.

Thesis (Ph.D.)--Princeton University, 2021.

This item must not be sold to any third party vendors.

The spin of electrons in silicon quantum dots has been a promising candidate for qubits for quantum computing applications in recent years, demonstrating long coherence time due to its weak spin-orbit coupling and the existence of stable zero nuclear spin isotopes. However, a fundamental challenge is the degeneracy of the conduction band minima, which is a decoherence source. The realization of atomically flat Si/SiGe heterostructures which can potentially solve the small valley splitting issue in Si/SiGe quantum dots applications motivated the work in this thesis.We successfully built an Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD) system to overcome the limitations of a previous Rapid Thermal CVD system to grow Si/SiGe heterostructures. The within-wafer uniformity is better than 3% and the wafer-to-wafer uniformity is better than 5%, after improving the heating configuration. By optimizing the Si regrowth interface preparation method, we are able to keep the contamination density at the regrowth interface below 3$\imes$10$.

ISBN: 9798505539576Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Chemical vapor deposition

Growth of Atomically-Flat Si/SiGe Heterostructures by Ultra-High-Vacuum Chemical Vapor Deposition.
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300 $a 147 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-12, Section: B.
500 $a Advisor: Sturm, James.
502 $a Thesis (Ph.D.)--Princeton University, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a The spin of electrons in silicon quantum dots has been a promising candidate for qubits for quantum computing applications in recent years, demonstrating long coherence time due to its weak spin-orbit coupling and the existence of stable zero nuclear spin isotopes. However, a fundamental challenge is the degeneracy of the conduction band minima, which is a decoherence source. The realization of atomically flat Si/SiGe heterostructures which can potentially solve the small valley splitting issue in Si/SiGe quantum dots applications motivated the work in this thesis.We successfully built an Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD) system to overcome the limitations of a previous Rapid Thermal CVD system to grow Si/SiGe heterostructures. The within-wafer uniformity is better than 3% and the wafer-to-wafer uniformity is better than 5%, after improving the heating configuration. By optimizing the Si regrowth interface preparation method, we are able to keep the contamination density at the regrowth interface below 3$\imes$10$.
520 $a $ cm$.
520 $a {-2}$. With a base pressure less than 5$\imes$10$.
520 $a {-9}$ torr, the O and C contamination inside the Si and SiGe layers are both below 5$\imes$10$.
520 $a $ cm$.
520 $a {-3}$ at growth temperatures of 575℃, which is 20 times better than layers grown by the old RT-CVD system. We then focused on the morphology study of SiGe layers grown on relaxed SiGe buffer. Three types of SiGe roughening mechanisms were identified and investigated: low-temperature roughening, high-temperature roughening, and initial interface effects. By introducing a thin Si buffer layer on top of the polished SiGe relaxed buffer, we demonstrated a nearly-atomically flat relaxed Si$_{0.7}$Ge$_{0.3}$ layer grown on a polished graded relaxed SiGe buffer, flatter than previous work for a relaxed Si$_{0.7}$Ge$_{0.3}$ layer ready for subsequent epitaxy by roughly a factor of four. We attributed the smoothing effect of the silicon to high ad-atom surface mobility during silicon growth. We further demonstrated that on the scale of silicon quantum dots (~100 nm), the RMS roughness was only 0.08 nm, about half of an atomic step height. This result may enable the subsequent growth of a tensile-Si channel with a large valley splitting.
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653 $a Chemical vapor deposition
653 $a Quantum computing
653 $a SiGe epitaxy
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710 2 $a Princeton University. $b Electrical Engineering. $3 2095953
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