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Materials and Device Engineering for...

Xia, Zhanbo.

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Materials and Device Engineering for High Performance β-Ga2O3-Based Electronics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Materials and Device Engineering for High Performance β-Ga2O3-Based Electronics./
作者:	Xia, Zhanbo.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	136 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-07, Section: B.
Contained By:	Dissertations Abstracts International82-07B.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28245194
ISBN:	9798691226458

Materials and Device Engineering for High Performance β-Ga2O3-Based Electronics.
Xia, Zhanbo.

Materials and Device Engineering for High Performance β-Ga2O3-Based Electronics. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 136 p.

Source: Dissertations Abstracts International, Volume: 82-07, Section: B.

Thesis (Ph.D.)--The Ohio State University, 2020.

This item must not be sold to any third party vendors.

β-Ga2O3 has recently attracted attention as an ultra-wide bandgap (4.7 eV) semiconductor that can be controllably doped, and grown directly from the melt in single crystal form. The ease of n-type doping with tetravalent cations, a wide variety of bulk single crystal and epitaxial film growth techniques have triggered worldwide interest in β-Ga2O3. The predicted breakdown electric field (6-8 MV/cm) is higher than that of GaN or SiC (~3 MV/cm), which when combined with electron mobility (predicted ~250 cm2/Vs) and electron velocity (1.2x107 cm/s) yields higher figures of merits than SiC and GaN devices.This thesis presents theoretical and experimental investigations of β-Ga2O3 device designs to achieve high-performance RF and power electronics for future applications. The first part of the thesis analyzes the potential device advantages that can be derived from the fundamental β-Ga2O3 material parameters (electron mobility, saturation velocity, and breakdown field). The theoretical β-Ga2O3 device output power density is calculated and compared to GaN HEMTs to find the potential RF applications of β-Ga2O3 devices. The potential of β-Ga2O3 for power devices is also calculated and discussed. Through detailed 2-D device simulation, device design strategies for utilizing the high breakdown field and mitigating low electron mobility effects are proposed.The thesis then focuses on the experimental demonstration and progress on lateral β-Ga2O3 device designs, including (AlGa)2O3/Ga2O3 MODFETs and delta-doped MESFFETs. (AlGa)2O3/Ga2O3 MODFET is one suitable device structure for high-performance β-Ga2O3 electronics because of the 2-D electron gas (2DEG) channel with high electron mobility. The electrical properties of the grown film and the MODFET device characteristics are studied. MBE-grown Ohmic contact is developed for the (AlGa)2O3/Ga2O3 MODFETs to improve their device performance. The high mobility 2DEG channel and low-resistance Ohmic contact enable the direct measurements of the electron saturation velocity of β-Ga2O3. The electron saturation velocity of 1.2x107 cm/s is obtained through two-terminal saturation current measurements and transit time analysis of the transistors, which confirms the potentials for β-Ga2O3 RF applications. As the other suitable lateral device structure, β-Ga2O3 delta-doped MESFFETs offer more design flexibility on high channel charge density than (AlGa)2O3/Ga2O3 MODFETs. β-Ga2O3 delta-doped MESFFETs with ultra-scaled gate lengths are demonstrated. The devices achieve a current gain cut-off frequency of 27 GHz, the highest reported to date, with a peak current density of 260 mA/mm.Regarding electric field management, BaTiO3/β-Ga2O3 dielectric heterojunction structures are demonstrated for further improvement of the achievable breakdown field in β-Ga2O3 devices. A record breakdown electric field of 5.7 MV/cm is experimentally measured from the dielectric heterojunction structure. Towards the end of the thesis, future device designs including delta-doped double heterojunction field effect transistors and dielectric heterojunction field effect transistors are introduced.

ISBN: 9798691226458Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Gallium oxide

Materials and Device Engineering for High Performance β-Ga2O3-Based Electronics.
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300 $a 136 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-07, Section: B.
500 $a Advisor: Rajan, Siddharth.
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506 $a This item must not be sold to any third party vendors.
520 $a β-Ga2O3 has recently attracted attention as an ultra-wide bandgap (4.7 eV) semiconductor that can be controllably doped, and grown directly from the melt in single crystal form. The ease of n-type doping with tetravalent cations, a wide variety of bulk single crystal and epitaxial film growth techniques have triggered worldwide interest in β-Ga2O3. The predicted breakdown electric field (6-8 MV/cm) is higher than that of GaN or SiC (~3 MV/cm), which when combined with electron mobility (predicted ~250 cm2/Vs) and electron velocity (1.2x107 cm/s) yields higher figures of merits than SiC and GaN devices.This thesis presents theoretical and experimental investigations of β-Ga2O3 device designs to achieve high-performance RF and power electronics for future applications. The first part of the thesis analyzes the potential device advantages that can be derived from the fundamental β-Ga2O3 material parameters (electron mobility, saturation velocity, and breakdown field). The theoretical β-Ga2O3 device output power density is calculated and compared to GaN HEMTs to find the potential RF applications of β-Ga2O3 devices. The potential of β-Ga2O3 for power devices is also calculated and discussed. Through detailed 2-D device simulation, device design strategies for utilizing the high breakdown field and mitigating low electron mobility effects are proposed.The thesis then focuses on the experimental demonstration and progress on lateral β-Ga2O3 device designs, including (AlGa)2O3/Ga2O3 MODFETs and delta-doped MESFFETs. (AlGa)2O3/Ga2O3 MODFET is one suitable device structure for high-performance β-Ga2O3 electronics because of the 2-D electron gas (2DEG) channel with high electron mobility. The electrical properties of the grown film and the MODFET device characteristics are studied. MBE-grown Ohmic contact is developed for the (AlGa)2O3/Ga2O3 MODFETs to improve their device performance. The high mobility 2DEG channel and low-resistance Ohmic contact enable the direct measurements of the electron saturation velocity of β-Ga2O3. The electron saturation velocity of 1.2x107 cm/s is obtained through two-terminal saturation current measurements and transit time analysis of the transistors, which confirms the potentials for β-Ga2O3 RF applications. As the other suitable lateral device structure, β-Ga2O3 delta-doped MESFFETs offer more design flexibility on high channel charge density than (AlGa)2O3/Ga2O3 MODFETs. β-Ga2O3 delta-doped MESFFETs with ultra-scaled gate lengths are demonstrated. The devices achieve a current gain cut-off frequency of 27 GHz, the highest reported to date, with a peak current density of 260 mA/mm.Regarding electric field management, BaTiO3/β-Ga2O3 dielectric heterojunction structures are demonstrated for further improvement of the achievable breakdown field in β-Ga2O3 devices. A record breakdown electric field of 5.7 MV/cm is experimentally measured from the dielectric heterojunction structure. Towards the end of the thesis, future device designs including delta-doped double heterojunction field effect transistors and dielectric heterojunction field effect transistors are introduced.
590 $a School code: 0168.
650 4 $a Electrical engineering. $3 649834
650 4 $a Solid state physics. $3 518873
653 $a Gallium oxide
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653 $a Semiconductor device
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773 0 $t Dissertations Abstracts International $g 82-07B.
790 $a 0168
791 $a Ph.D.
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793 $a English
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