東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

A Gallium Nitride Integrated Onboard...

Zou, Shenli.

Linked to FindBook

Google Book

Amazon

博客來

A Gallium Nitride Integrated Onboard Charger.

Record Type:	Electronic resources : Monograph/item
Title/Author:	A Gallium Nitride Integrated Onboard Charger./
Author:	Zou, Shenli.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	158 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
Contained By:	Dissertations Abstracts International82-05B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27964950
ISBN:	9798678188670

A Gallium Nitride Integrated Onboard Charger.
Zou, Shenli.

A Gallium Nitride Integrated Onboard Charger. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 158 p.

Source: Dissertations Abstracts International, Volume: 82-05, Section: B.

Thesis (Ph.D.)--University of Maryland, College Park, 2020.

This item is not available from ProQuest Dissertations & Theses.

Compared to Silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), Gallium Nitride (GaN) devices have a significant reduction in gate charge, output capacitance, and zero reverse recovery charge, enabling higher switching frequency operation and efficient power conversion. GaN devices are gaining momentum in power electronic systems such as electric vehicle (EV) charging system, due to their promises to significantly enhance the power density and efficiency. In this dissertation, a GaN-based integrated onboard charger (OBC) and auxiliary power module (APM) is proposed for EVs to ensure high efficiency, high frequency, high power density, and capability of bidirectional operation. The high switching frequency operation enabled by the GaN devices and the integration of OBC and APM bring many unique challenges, which are addressed in this dissertation. An important challenge is the optimal design of high-frequency magnetics for a high-frequency GaN-based power electronic interface. Another challenge is to achieve power flow management among three active ports while minimizing the circulating power. Furthermore, the impact of circuit layout parasitics could significantly deteriorate the system interface, due to the sensitivity of GaN device switching characteristics.In this work, the aforementioned challenges have been addressed. First, a comprehensive analysis of the front-end AC-DC power factor correction stage is presented, covering a detailed magnetic modeling technique to address the high-frequency magnetics challenge. Second, the modeling and control of a three-port DC-DC converter, interfacing the AC-DC stage, high-voltage traction battery and low-voltage battery, are discussed to address the power flow challenge. Advanced control methodologies are developed to realize power flow management while maintaining minimum circulating power and soft switching. Furthermore, a new three-winding high-frequency transformer design with improved power density and efficiency is achieved using a genetic-algorithm-based optimization approach. Finally, a GaN-based integrated charger prototype is developed to validate the proposed theoretical hypothesis. The experimental results showed that the GaN-based charging system has the capability of achieving simultaneous charging (G2B) of both HV and LV batteries with a peak efficiency of 95%.

ISBN: 9798678188670Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Charger

A Gallium Nitride Integrated Onboard Charger.
LDR:03587nmm a2200385 4500 001 2280587
005 20210907071103.5
008 220723s2020 ||||||||||||||||| ||eng d
020 $a 9798678188670
035 $a (MiAaPQ)AAI27964950
035 $a AAI27964950
040 $a MiAaPQ $c MiAaPQ
100 1 $a Zou, Shenli. $0 (orcid)0000-0003-1598-5634 $3 3559125
245 1 0 $a A Gallium Nitride Integrated Onboard Charger.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 158 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
500 $a Advisor: Khaligh, Alireza.
502 $a Thesis (Ph.D.)--University of Maryland, College Park, 2020.
506 $a This item is not available from ProQuest Dissertations & Theses.
506 $a This item must not be sold to any third party vendors.
520 $a Compared to Silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), Gallium Nitride (GaN) devices have a significant reduction in gate charge, output capacitance, and zero reverse recovery charge, enabling higher switching frequency operation and efficient power conversion. GaN devices are gaining momentum in power electronic systems such as electric vehicle (EV) charging system, due to their promises to significantly enhance the power density and efficiency. In this dissertation, a GaN-based integrated onboard charger (OBC) and auxiliary power module (APM) is proposed for EVs to ensure high efficiency, high frequency, high power density, and capability of bidirectional operation. The high switching frequency operation enabled by the GaN devices and the integration of OBC and APM bring many unique challenges, which are addressed in this dissertation. An important challenge is the optimal design of high-frequency magnetics for a high-frequency GaN-based power electronic interface. Another challenge is to achieve power flow management among three active ports while minimizing the circulating power. Furthermore, the impact of circuit layout parasitics could significantly deteriorate the system interface, due to the sensitivity of GaN device switching characteristics.In this work, the aforementioned challenges have been addressed. First, a comprehensive analysis of the front-end AC-DC power factor correction stage is presented, covering a detailed magnetic modeling technique to address the high-frequency magnetics challenge. Second, the modeling and control of a three-port DC-DC converter, interfacing the AC-DC stage, high-voltage traction battery and low-voltage battery, are discussed to address the power flow challenge. Advanced control methodologies are developed to realize power flow management while maintaining minimum circulating power and soft switching. Furthermore, a new three-winding high-frequency transformer design with improved power density and efficiency is achieved using a genetic-algorithm-based optimization approach. Finally, a GaN-based integrated charger prototype is developed to validate the proposed theoretical hypothesis. The experimental results showed that the GaN-based charging system has the capability of achieving simultaneous charging (G2B) of both HV and LV batteries with a peak efficiency of 95%.
590 $a School code: 0117.
650 4 $a Electrical engineering. $3 649834
650 4 $a Computer engineering. $3 621879
650 4 $a Engineering. $3 586835
650 4 $a Automotive engineering. $3 2181195
653 $a Charger
653 $a Electric Vehicles
653 $a Gallium Nitride
653 $a Power Electronics
690 $a 0544
690 $a 0464
690 $a 0537
690 $a 0540
710 2 $a University of Maryland, College Park. $b Electrical Engineering. $3 1018746
773 0 $t Dissertations Abstracts International $g 82-05B.
790 $a 0117
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27964950