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Ge-MoS2 PN Diodes for TFET Applications.

Singh, Shaleen Prakash.

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Ge-MoS2 PN Diodes for TFET Applications.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ge-MoS2 PN Diodes for TFET Applications./
作者:	Singh, Shaleen Prakash.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	75 p.
附註:	Source: Masters Abstracts International, Volume: 82-05.
Contained By:	Masters Abstracts International82-05.
標題:	Condensed matter physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28122779
ISBN:	9798664736755

Ge-MoS2 PN Diodes for TFET Applications.
Singh, Shaleen Prakash.

Ge-MoS2 PN Diodes for TFET Applications. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 75 p.

Source: Masters Abstracts International, Volume: 82-05.

Thesis (M.Sc.)--North Carolina State University, 2020.

This item must not be sold to any third party vendors.

The performance of silicon-based CMOS integrated circuits has begun to stall due to physical scaling limits. In order to keep up with future demand for highly efficient and high-performance computing laid out by the International Technology Roadmap for Semiconductors (ITRS), it is imperative that both new semiconductor materials and new devices are studied. One candidate device is the tunneling field-effect transistor (TFET), which offers the advantage of steep-slope (<60 mV/dec) switching. Recent experimental studies have demonstrated such a device using bulk, p-type germanium (Ge) substrates and n-type 2D molybdenum disulfide (MoS2). The advantage of 2D materials lies in the promise of enhanced electrostatic control of the channel due to their inherently thin body. A major barrier for the Ge-MoS2 TFET is the presence of a native and substoichiometric GeOx (germanium oxide) layer at the Ge-MoS2 interface, which may degrade the subthreshold slope and reduce the drive current (ION). Hence, the goal of this thesis is to verify whether hydrobromic (HBr) and hydrochloric (HCl) acid treatment of the Ge surface will remove these defects and passivate the p-type Ge surface prior to the addition of n-type MoS2. The efficacy of this approach is assessed through the use of Ge-MoS2 heterostructure PN junction diodes. The electrical characterization results obtained from our Ge-MoS2 devices deviate from expected results and any obvious trend in these characteristics was not found, suggesting the existence of some unknown non-idealities. Future studies that focus on these challenges are needed to realize ideal Ge-MoS2 TFETs for beyond-CMOS computing systems.

ISBN: 9798664736755Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

germanium

Ge-MoS2 PN Diodes for TFET Applications.
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