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Studies of Mn Doped ZnO Nanorods for...

Lamichhane, Pralhad.

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Studies of Mn Doped ZnO Nanorods for the Fabrication of Heterojunction Light Emitting Diode.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Studies of Mn Doped ZnO Nanorods for the Fabrication of Heterojunction Light Emitting Diode./
Author:	Lamichhane, Pralhad.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
Description:	58 p.
Notes:	Source: Masters Abstracts International, Volume: 79-11.
Contained By:	Masters Abstracts International79-11.
Subject:	Nanoscience. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10790133
ISBN:	9780355914962

Studies of Mn Doped ZnO Nanorods for the Fabrication of Heterojunction Light Emitting Diode.
Lamichhane, Pralhad.

Studies of Mn Doped ZnO Nanorods for the Fabrication of Heterojunction Light Emitting Diode. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 58 p.

Source: Masters Abstracts International, Volume: 79-11.

Thesis (M.S.)--The University of Tulsa, 2018.

This item must not be sold to any third party vendors.

The main objective of this work is to investigate the structural, optical and electronic properties of manganese (Mn) doped Zinc Oxide (ZnO) NRs fabricated by a precipitation method for the characterization of GaN/ZnO heterojunction light emitting diode. Scanning electron microscopy (SEM) studies revealed the decrease in diameter of the nanorods with increasing the Mn concentration from 0 to 20%. X-ray diffraction (XRD) measurement demonstrated a reduction in diffraction intensity but no change in the wurtzite structure of ZnO as we increased the Mn content from 0 to 20%. The band gap measurement, using UV-Vis absorption spectrometer and n & K Analyzer showed a decrease in bandgap from 3.21 to 3.17 eV as the Mn percentage is increased from 0 to 10% but an increase in bandgap for higher dopant. On increasing the doping percentage of Mn from 0 to 10%, a red shift in both Photoluminescence (PL) spectroscopy and absorption band spectrum was observed. However, a blue shift was observed for 15% and 20 % of Mn content. The conductivity measurements observed from Cole-Cole plot and EIS analyzer shows a decrease in grain resistance and grain capacitance with increasing the doping concentration of Mn from 0 to 20%. The Current-Voltage (I-V) character studies of ZnO/GaN LEDs showed a diode like behavior with the ideality factor as 3.5. The green spectrum of light was observed when the ZnO seed layer was made by Zn target using sputtering process, whereas a yellow emission was observed using Zinc acetate as the seed layer.

ISBN: 9780355914962Subjects--Topical Terms:

587832
Nanoscience.

Studies of Mn Doped ZnO Nanorods for the Fabrication of Heterojunction Light Emitting Diode.
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506 $a This item must not be sold to any third party vendors.
520 $a The main objective of this work is to investigate the structural, optical and electronic properties of manganese (Mn) doped Zinc Oxide (ZnO) NRs fabricated by a precipitation method for the characterization of GaN/ZnO heterojunction light emitting diode. Scanning electron microscopy (SEM) studies revealed the decrease in diameter of the nanorods with increasing the Mn concentration from 0 to 20%. X-ray diffraction (XRD) measurement demonstrated a reduction in diffraction intensity but no change in the wurtzite structure of ZnO as we increased the Mn content from 0 to 20%. The band gap measurement, using UV-Vis absorption spectrometer and n & K Analyzer showed a decrease in bandgap from 3.21 to 3.17 eV as the Mn percentage is increased from 0 to 10% but an increase in bandgap for higher dopant. On increasing the doping percentage of Mn from 0 to 10%, a red shift in both Photoluminescence (PL) spectroscopy and absorption band spectrum was observed. However, a blue shift was observed for 15% and 20 % of Mn content. The conductivity measurements observed from Cole-Cole plot and EIS analyzer shows a decrease in grain resistance and grain capacitance with increasing the doping concentration of Mn from 0 to 20%. The Current-Voltage (I-V) character studies of ZnO/GaN LEDs showed a diode like behavior with the ideality factor as 3.5. The green spectrum of light was observed when the ZnO seed layer was made by Zn target using sputtering process, whereas a yellow emission was observed using Zinc acetate as the seed layer.
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