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Growth Engineering and Characterizat...

Creeden, Jason Andrew.

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Growth Engineering and Characterization of Vanadium Dioxide Films for Ultraviolet Detection.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth Engineering and Characterization of Vanadium Dioxide Films for Ultraviolet Detection./
作者:	Creeden, Jason Andrew.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	187 p.
附註:	Source: Dissertations Abstracts International, Volume: 81-09, Section: B.
Contained By:	Dissertations Abstracts International81-09B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=22619914
ISBN:	9781392662090

Growth Engineering and Characterization of Vanadium Dioxide Films for Ultraviolet Detection.
Creeden, Jason Andrew.

Growth Engineering and Characterization of Vanadium Dioxide Films for Ultraviolet Detection. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 187 p.

Source: Dissertations Abstracts International, Volume: 81-09, Section: B.

Thesis (Ph.D.)--The College of William and Mary, 2020.

This item is not available from ProQuest Dissertations & Theses.

There is a need for efficient ultraviolet (UV) detectors in many fields, such as aerospace, automotive manufacturing, biology, environmental science, and defense, due to photomultiplier tubes (the currently available technology) often not meeting application constraints in weight, robustness, and power consumption. In my thesis, I demonstrate that high quality vanadium dioxide (VO2) thin films, epitaxially grown on niobium doped titanium dioxide substrates (TiO2:Nb), display a strong photoconductive response in the UV spectral range, making them promising candidates for photomultiplier-free UV photodetection. By adjusting the characteristics of the substrate and VO2 film, the samples achieve external quantum efficiency exceeding 100% (reaching beyond 1,000% for optimized samples) superior to that of current wide band gap UV detectors at room temperature. The mechanism for photocurrent production in VO2/TiO2:Nb heterostructure is a space-charge region, engineered in the heterojunction, yielding favorable conditions for hole tunneling from TiO2:Nb into VO2. Improving upon the heterostructure, I demonstrate up to an order of magnitude improvement in parameters such as responsivity, external quantum efficiency, detectivity, and dark current density by applying Au films to the VO2/TiO2:Nb heterostructure. Ultimately, my work proved that the VO2/TiO2:Nb heterostructure is a promising alternative technology for UV detection in high demand fields, with great potential for scalable device production.

ISBN: 9781392662090Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

Photoconductivity

Growth Engineering and Characterization of Vanadium Dioxide Films for Ultraviolet Detection.
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300 $a 187 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-09, Section: B.
500 $a Advisor: Lukaszew, Rosa A;Novikova, Irina.
502 $a Thesis (Ph.D.)--The College of William and Mary, 2020.
506 $a This item is not available from ProQuest Dissertations & Theses.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a There is a need for efficient ultraviolet (UV) detectors in many fields, such as aerospace, automotive manufacturing, biology, environmental science, and defense, due to photomultiplier tubes (the currently available technology) often not meeting application constraints in weight, robustness, and power consumption. In my thesis, I demonstrate that high quality vanadium dioxide (VO2) thin films, epitaxially grown on niobium doped titanium dioxide substrates (TiO2:Nb), display a strong photoconductive response in the UV spectral range, making them promising candidates for photomultiplier-free UV photodetection. By adjusting the characteristics of the substrate and VO2 film, the samples achieve external quantum efficiency exceeding 100% (reaching beyond 1,000% for optimized samples) superior to that of current wide band gap UV detectors at room temperature. The mechanism for photocurrent production in VO2/TiO2:Nb heterostructure is a space-charge region, engineered in the heterojunction, yielding favorable conditions for hole tunneling from TiO2:Nb into VO2. Improving upon the heterostructure, I demonstrate up to an order of magnitude improvement in parameters such as responsivity, external quantum efficiency, detectivity, and dark current density by applying Au films to the VO2/TiO2:Nb heterostructure. Ultimately, my work proved that the VO2/TiO2:Nb heterostructure is a promising alternative technology for UV detection in high demand fields, with great potential for scalable device production.
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650 4 $a Nanotechnology. $3 526235
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653 $a Photoconductivity
653 $a Reactive magentron sputter Deposition
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653 $a Titanium dioxide
653 $a Ultraviolet detector
653 $a Vanadium dioxide
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690 $a 0652
710 2 $a The College of William and Mary. $b Physics. $3 3429425
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