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Ballistic Y-Branch Switches: Current...

McDonough, Trevor Riley.

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Ballistic Y-Branch Switches: Current Progress and Future Plans.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Ballistic Y-Branch Switches: Current Progress and Future Plans./
Author:	McDonough, Trevor Riley.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	70 p.
Notes:	Source: Masters Abstracts International, Volume: 82-01.
Contained By:	Masters Abstracts International82-01.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27995826
ISBN:	9798641735726

Ballistic Y-Branch Switches: Current Progress and Future Plans.
McDonough, Trevor Riley.

Ballistic Y-Branch Switches: Current Progress and Future Plans. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 70 p.

Source: Masters Abstracts International, Volume: 82-01.

Thesis (M.S.)--State University of New York at Buffalo, 2020.

This item must not be sold to any third party vendors.

There has been a drive to make electronic devices smaller, faster, and more efficient over the past several decades. In order to accomplish this, many researchers have been looking for novel technologies and devices to replace MOSFETs. One such type of device is the Y-branch switch (YBS). By applying an electric field across the source waveguide, the wavefunction of the electrons can be shifted to steer them down the desired "branch" of the intersection. Such YBSs can be easily be used to form traditional logic gates. It would therefore be unnecessary to develop and transition to a completely new digital logic system, but the novel behavior of these devices does offer an easier path to potentially better logic systems.While YBSs have been fabricated in the past, they have all suffered from either poor gate efficiency or significant leakage current. We believe that high-κ dielectric gates will solve this and have been working on fabricating such gates on a YBS, and we have thus far successfully fabricated functional three-terminal ballistic junctions. I have also created the basic framework for simulations of such devices using Silvaco Atlas, and have proposed several options to achieve the desired independent high-κ dielectric gates.

ISBN: 9798641735726Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Ballistic

Ballistic Y-Branch Switches: Current Progress and Future Plans.
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100 1 $a McDonough, Trevor Riley. $3 3549570
245 1 0 $a Ballistic Y-Branch Switches: Current Progress and Future Plans.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 70 p.
500 $a Source: Masters Abstracts International, Volume: 82-01.
500 $a Advisor: Mitin, Vladimir.
502 $a Thesis (M.S.)--State University of New York at Buffalo, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a There has been a drive to make electronic devices smaller, faster, and more efficient over the past several decades. In order to accomplish this, many researchers have been looking for novel technologies and devices to replace MOSFETs. One such type of device is the Y-branch switch (YBS). By applying an electric field across the source waveguide, the wavefunction of the electrons can be shifted to steer them down the desired "branch" of the intersection. Such YBSs can be easily be used to form traditional logic gates. It would therefore be unnecessary to develop and transition to a completely new digital logic system, but the novel behavior of these devices does offer an easier path to potentially better logic systems.While YBSs have been fabricated in the past, they have all suffered from either poor gate efficiency or significant leakage current. We believe that high-κ dielectric gates will solve this and have been working on fabricating such gates on a YBS, and we have thus far successfully fabricated functional three-terminal ballistic junctions. I have also created the basic framework for simulations of such devices using Silvaco Atlas, and have proposed several options to achieve the desired independent high-κ dielectric gates.
590 $a School code: 0656.
650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
650 4 $a Quantum physics. $3 726746
653 $a Ballistic
653 $a Independent sidewall gate
653 $a Quantum switch
653 $a Terahertz switching
653 $a Y-Branch Structure
653 $a Y-Branch Switch
690 $a 0544
690 $a 0652
690 $a 0599
710 2 $a State University of New York at Buffalo. $b Electrical Engineering. $3 1019366
773 0 $t Masters Abstracts International $g 82-01.
790 $a 0656
791 $a M.S.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27995826