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Design and Development of High Perfo...

Huang, Xuanqi.

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Design and Development of High Performance III-Nitrides Photovoltaics.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Design and Development of High Performance III-Nitrides Photovoltaics./
作者:	Huang, Xuanqi.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	184 p.
附註:	Source: Dissertations Abstracts International, Volume: 81-11, Section: B.
Contained By:	Dissertations Abstracts International81-11B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27833751
ISBN:	9798645456184

Design and Development of High Performance III-Nitrides Photovoltaics.
Huang, Xuanqi.

Design and Development of High Performance III-Nitrides Photovoltaics. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 184 p.

Source: Dissertations Abstracts International, Volume: 81-11, Section: B.

Thesis (Ph.D.)--Arizona State University, 2020.

This item must not be sold to any third party vendors.

Wurtzite (In, Ga, Al) N semiconductors, especially InGaN material systems, demonstrate immense promises for the high efficiency thin ﬁlm photovoltaic (PV) applications for future generation. Their unique and intriguing merits include continuously tunable wide band gap from 0.70 eV to 3.4 eV, strong absorption coefficient on the order of ∼105 cm−1, superior radiation resistance under harsh environment, and high saturation velocities and high mobility. Calculation from the detailed balance model also revealed that in multi-junction (MJ) solar cell device, materials with band gaps higher than 2.4 eV are required to achieve PV efﬁciencies greater than 50%, which is practically and easily feasible for InGaN materials. Other state-of-art modeling on InGaN solar cells also demonstrate great potential for applications of III-nitride solar cells in four-junction solar cell devices as well as in the integration with a non-III-nitride junction in multi-junction devices.This dissertation first theoretically analyzed loss mechanisms and studied the theoretical limit of PV performance of InGaN solar cells with a semi-analytical model. Then three device design strategies are proposed to study and improve PV performance: band polarization engineering, structural design and band engineering. Moreover, three physical mechanisms related to high temperature performance of InGaN solar cells have been thoroughly investigated: thermal reliability issue, enhanced external quantum efficiency (EQE) and conversion efficiency with rising temperatures and carrier dynamics and localization effects inside nonpolar m-plane InGaN quantum wells (QWs) at high temperatures. In the end several future work will also be proposed.Although still in its infancy, past and projected future progress of device design will ultimately achieve this very goal that III-nitride based solar cells will be indispensable for today and future's society, technologies and society.

ISBN: 9798645456184Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Applied sciences

Design and Development of High Performance III-Nitrides Photovoltaics.
LDR:03145nmm a2200385 4500 001 2272116
005 20201102111709.5
008 220629s2020 ||||||||||||||||| ||eng d
020 $a 9798645456184
035 $a (MiAaPQ)AAI27833751
035 $a AAI27833751
040 $a MiAaPQ $c MiAaPQ
100 1 $a Huang, Xuanqi. $3 3549543
245 1 0 $a Design and Development of High Performance III-Nitrides Photovoltaics.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 184 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-11, Section: B.
500 $a Advisor: Zhao, Yuji.
502 $a Thesis (Ph.D.)--Arizona State University, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Wurtzite (In, Ga, Al) N semiconductors, especially InGaN material systems, demonstrate immense promises for the high efficiency thin ﬁlm photovoltaic (PV) applications for future generation. Their unique and intriguing merits include continuously tunable wide band gap from 0.70 eV to 3.4 eV, strong absorption coefficient on the order of ∼105 cm−1, superior radiation resistance under harsh environment, and high saturation velocities and high mobility. Calculation from the detailed balance model also revealed that in multi-junction (MJ) solar cell device, materials with band gaps higher than 2.4 eV are required to achieve PV efﬁciencies greater than 50%, which is practically and easily feasible for InGaN materials. Other state-of-art modeling on InGaN solar cells also demonstrate great potential for applications of III-nitride solar cells in four-junction solar cell devices as well as in the integration with a non-III-nitride junction in multi-junction devices.This dissertation first theoretically analyzed loss mechanisms and studied the theoretical limit of PV performance of InGaN solar cells with a semi-analytical model. Then three device design strategies are proposed to study and improve PV performance: band polarization engineering, structural design and band engineering. Moreover, three physical mechanisms related to high temperature performance of InGaN solar cells have been thoroughly investigated: thermal reliability issue, enhanced external quantum efficiency (EQE) and conversion efficiency with rising temperatures and carrier dynamics and localization effects inside nonpolar m-plane InGaN quantum wells (QWs) at high temperatures. In the end several future work will also be proposed.Although still in its infancy, past and projected future progress of device design will ultimately achieve this very goal that III-nitride based solar cells will be indispensable for today and future's society, technologies and society.
590 $a School code: 0010.
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Nanotechnology. $3 526235
653 $a Applied sciences
653 $a Gallium nitride
653 $a InGaN
653 $a Optoelectronics
653 $a Photovoltaic
653 $a Wide bandgap semiconductors
690 $a 0544
690 $a 0611
690 $a 0652
710 2 $a Arizona State University. $b Electrical Engineering. $3 1671741
773 0 $t Dissertations Abstracts International $g 81-11B.
790 $a 0010
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27833751