東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Characterization and simulations of ...

Nkanta, Julie.

Linked to FindBook

Google Book

Amazon

博客來

Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers./
Author:	Nkanta, Julie.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2008,
Description:	129 p.
Notes:	Source: Masters Abstracts International, Volume: 70-11.
Contained By:	Masters Abstracts International70-11.
Subject:	Optics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=MR46491
ISBN:	9780494464915

Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers.
Nkanta, Julie.

Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers. - Ann Arbor : ProQuest Dissertations & Theses, 2008 - 129 p.

Source: Masters Abstracts International, Volume: 70-11.

Thesis (M.Sc.)--University of Ottawa (Canada), 2008.

This item must not be sold to any third party vendors.

This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 μm in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8μm), cavity lengths (555 to 2200μm) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.

ISBN: 9780494464915Subjects--Topical Terms:

517925
Optics.

Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers.
LDR:02935nmm a2200313 4500 001 2270942
005 20201007134042.5
008 220629s2008 ||||||||||||||||| ||eng d
020 $a 9780494464915
035 $a (MiAaPQ)AAIMR46491
035 $a AAIMR46491
040 $a MiAaPQ $c MiAaPQ
100 1 $a Nkanta, Julie. $3 3548335
245 1 0 $a Characterization and simulations of long wavelength indium aluminum gallium arsenide/indium phosphide lasers.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2008
300 $a 129 p.
500 $a Source: Masters Abstracts International, Volume: 70-11.
500 $a Publisher info.: Dissertation/Thesis.
502 $a Thesis (M.Sc.)--University of Ottawa (Canada), 2008.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 μm in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8μm), cavity lengths (555 to 2200μm) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
590 $a School code: 0918.
650 4 $a Optics. $3 517925
650 4 $a Systems science. $3 3168411
690 $a 0752
690 $a 0790
710 2 $a University of Ottawa (Canada). $3 1017488
773 0 $t Masters Abstracts International $g 70-11.
790 $a 0918
791 $a M.Sc.
792 $a 2008
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=MR46491