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Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes./
作者:	Kim, Honghyuk .
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	212 p.
附註:	Source: Dissertations Abstracts International, Volume: 81-10, Section: B.
Contained By:	Dissertations Abstracts International81-10B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27735785
ISBN:	9798641783376

Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes.
Kim, Honghyuk .

Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 212 p.

Source: Dissertations Abstracts International, Volume: 81-10, Section: B.

Thesis (Ph.D.)--The University of Wisconsin - Madison, 2020.

This item must not be sold to any third party vendors.

This work summarizes the epitaxial growth by metal-organic vapor phase epitaxy (MOVPE) and the subsequent device characterizations for III-V semiconductor laser diodes, emitting in the near infrared wavelength range, which employ novel active regions consisting of either dilute GaAs1-xBix based quantum well (QW) or InxGa1-xAs-based quantum dots (QDs) formed by nanopatterning. The incorporation of the Bi atoms into the host GaAs matrix can lead to the rapid reduction in the band gap energy (Eg) and an increase in the spin-orbit splitting (ΔSO), which are believed to potentially suppress hot-hole driven Auger recombination and intervalence band absorption (IVBA) in the telecom wavelength regions (λ~0.98-1.55µm). The substantial reduction in the band gap energy is primarily explained by the perturbation between the valence band edge of the host GaAs matrix and the Bi impurity level . This origin of the band gap reduction therefore leads to a relatively large valence band offset at the GaAs and GaAs1-zBiz heterointerface, while resulting in a relatively small conduction band offset, especially within the dilute concentration regime (%Bi < ~5%). In addition, Bi atoms exhibit a low solubility within a host GaAs matrix, requiring the epitaxial growth to be performed in a non-typical condition such as a low growth temperature (~400°C) and a near stoichiometric V/III gas phase molar flow ratio (~1). These growth conditions can lead to a high degree of unintentional carbon incorporation as well as a high density of point defects and defect complexes within the GaAs1-zBiz epitaxial layer, thereby degrading the luminescent properties. Therefore, a careful optimization of both the growth parameters and the heterostructure design is necessary for the application of the GaAs1-zBiz film to the optoelectronic devices such as laser diodes and solar cells, which is a subject investigated in this work. Moreover, the impacts of the post growth thermal annealing on the luminescent properties of GaAs1-zBiz based QWs, evaluated by either photoluminescence or the laser device performances, are present in this thesis. In addition, the MOVPE process allows for the epitaxial deposition of a thin layer by the chemical interaction between the heated substrate and the chemical species decomposed from the reactant gases within a cold-wall reactor. Thus, the MOVPE process is well suited to perform selective area epitaxy (SAE) where the local growth of an epitaxial layer is carried out through patterned amorphous dielectric masks such as SiO2 or Si3N4. In a conventional QD active region, the QDs are formed on an inherent two-dimensional wetting layer, which prevents the full 3-dimentional carrier confinement to the QD, and thus presents challenges for realizing the predicted ideal characteristics of the QD laser such as large differential gain for high speed modulation, low temperature sensitivities in the lasing wavelength and ultra-low threshold current densities. By contrast, nanopatterning and selective SAE offer a more controllable pathway for QD formation, allowing the QD size to be decoupled from the strain state of the material. This process results in the formation of dense arrays of wetting-layer-free QDs, although the challenges stemming from surface state formation and efficient carrier injection into the QDs have remained problematic issues. In this work, the InxGa1-xAs-based QD active region lasers grown on either GaAs or InP substrate were demonstrated, where the QDs are formed by block copolymer (BCP) lithography and the subsequent SAE, that results in the QD density of ~8x10.

ISBN: 9798641783376Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Epitaxy

Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes.
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100 1 $a Kim, Honghyuk . $3 3543289
245 1 0 $a Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 212 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-10, Section: B.
500 $a Advisor: Mawst, Luke.
502 $a Thesis (Ph.D.)--The University of Wisconsin - Madison, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a This work summarizes the epitaxial growth by metal-organic vapor phase epitaxy (MOVPE) and the subsequent device characterizations for III-V semiconductor laser diodes, emitting in the near infrared wavelength range, which employ novel active regions consisting of either dilute GaAs1-xBix based quantum well (QW) or InxGa1-xAs-based quantum dots (QDs) formed by nanopatterning. The incorporation of the Bi atoms into the host GaAs matrix can lead to the rapid reduction in the band gap energy (Eg) and an increase in the spin-orbit splitting (ΔSO), which are believed to potentially suppress hot-hole driven Auger recombination and intervalence band absorption (IVBA) in the telecom wavelength regions (λ~0.98-1.55µm). The substantial reduction in the band gap energy is primarily explained by the perturbation between the valence band edge of the host GaAs matrix and the Bi impurity level . This origin of the band gap reduction therefore leads to a relatively large valence band offset at the GaAs and GaAs1-zBiz heterointerface, while resulting in a relatively small conduction band offset, especially within the dilute concentration regime (%Bi < ~5%). In addition, Bi atoms exhibit a low solubility within a host GaAs matrix, requiring the epitaxial growth to be performed in a non-typical condition such as a low growth temperature (~400°C) and a near stoichiometric V/III gas phase molar flow ratio (~1). These growth conditions can lead to a high degree of unintentional carbon incorporation as well as a high density of point defects and defect complexes within the GaAs1-zBiz epitaxial layer, thereby degrading the luminescent properties. Therefore, a careful optimization of both the growth parameters and the heterostructure design is necessary for the application of the GaAs1-zBiz film to the optoelectronic devices such as laser diodes and solar cells, which is a subject investigated in this work. Moreover, the impacts of the post growth thermal annealing on the luminescent properties of GaAs1-zBiz based QWs, evaluated by either photoluminescence or the laser device performances, are present in this thesis. In addition, the MOVPE process allows for the epitaxial deposition of a thin layer by the chemical interaction between the heated substrate and the chemical species decomposed from the reactant gases within a cold-wall reactor. Thus, the MOVPE process is well suited to perform selective area epitaxy (SAE) where the local growth of an epitaxial layer is carried out through patterned amorphous dielectric masks such as SiO2 or Si3N4. In a conventional QD active region, the QDs are formed on an inherent two-dimensional wetting layer, which prevents the full 3-dimentional carrier confinement to the QD, and thus presents challenges for realizing the predicted ideal characteristics of the QD laser such as large differential gain for high speed modulation, low temperature sensitivities in the lasing wavelength and ultra-low threshold current densities. By contrast, nanopatterning and selective SAE offer a more controllable pathway for QD formation, allowing the QD size to be decoupled from the strain state of the material. This process results in the formation of dense arrays of wetting-layer-free QDs, although the challenges stemming from surface state formation and efficient carrier injection into the QDs have remained problematic issues. In this work, the InxGa1-xAs-based QD active region lasers grown on either GaAs or InP substrate were demonstrated, where the QDs are formed by block copolymer (BCP) lithography and the subsequent SAE, that results in the QD density of ~8x10.
520 $a 10cm2. Improved luminescent properties such as an increase in the PL intensity (at room temperature) and a substantial reduction in the threshold current density (at 80K) were obtained by in situ etching prior to the SAE of In0.3Ga0.7As QDs on GaAs substrate. In addition, an enhanced carrier injection into the InAs QDs in the presence of an adjacent QW is experimentally demonstrated. Furthermore, the growth and the characteristics of In0.8Ga0.2As QD active region lasers grown on InP substrate are present in this work, which resulted in a relatively low threshold current density of 1.6 kA/cm2 with the emission wavelength of 1.67 µm near room temperature.
590 $a School code: 0262.
650 4 $a Electrical engineering. $3 649834
650 4 $a Optics. $3 517925
650 4 $a Materials science. $3 543314
653 $a Epitaxy
653 $a Semiconductor laser
653 $a Thin film deposition
653 $a X-ray diffraction
690 $a 0544
690 $a 0752
690 $a 0794
710 2 $a The University of Wisconsin - Madison. $b Electrical Engineering. $3 2095968
773 0 $t Dissertations Abstracts International $g 81-10B.
790 $a 0262
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27735785