東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Metallic Circular Disk Optical Anten...

Kemsri, Thitikorn.

FindBook

Google Book

Amazon

博客來

Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector./
作者:	Kemsri, Thitikorn.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2019,
面頁冊數:	109 p.
附註:	Source: Dissertations Abstracts International, Volume: 80-12, Section: B.
Contained By:	Dissertations Abstracts International80-12B.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13860931
ISBN:	9781392263822

Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector.
Kemsri, Thitikorn.

Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector. - Ann Arbor : ProQuest Dissertations & Theses, 2019 - 109 p.

Source: Dissertations Abstracts International, Volume: 80-12, Section: B.

Thesis (Ph.D.)--University of Massachusetts Lowell, 2019.

This item must not be sold to any third party vendors.

In the semiconductor world, several kinds of detectors have been studied and invented for different usages. Such an infrared wavelength, researching the infrared photodetector has been continually investigated. Especially Quantum Dots Infrared Photodetectors (QDIPs) and P-I-N Photodetector (PIN), they will play significant roles in the light absorption by converting the photons into electrical signals.However, increasing the performance of the photodetector also has been researching until now. The one approach is Surface Plasmonic Resonance (SPR), which is an interaction between the metal and dielectric mediums leading to the electron oscillation, a resonant frequency with the strong electric field. In this proposal, the surface plasmonic structure was entirely fabricated into Metallic Circular Disk Antenna (MCDA) on the QDIPs and the GaAs PIN photodetector to induce the electron confinement and also electromagnetic field enhancement.The measurement took place in two sections by comparing the photodetectors with a plasmonic structure on the surface and none of the plasmonic structure as a reference. The first part was an angular dependence experiment by QDIPs to see the angular dependence corresponding to the MCDA. With the practical result of MCDA in QDIPs, the strong electric fields and current densities were a consequence of the plasmonic structures at larger incident angle 0, 30,45, and 60 degrees respectively in LWIR (7.6 um).The second part involved the nano-MCDA resulting in the fast response and induced E-field distribution of the GaAs PIN photodetector. Correlating with the nanoantenna on the GaAs PIN photodetector and a mode-lock femtosecond (fs) laser to frequency comb illumination, the surface plasmonic nanoantenna can bring about the faster response of the GaAs PIN than the reference in NWIR (850 nm) from 2.4 (GHz) to 4.2 GHz.Furthermore, we investigated the avalanche phenomenon on the GaAs PIN photodetector with the nanoantenna by implementing the high voltage (-27 to -30v.). The result came out: the nano-optical antenna can produce the enhancement for speed response in the harmonic frequency and the cut-off frequency from (2.4 GHz) to around 6 GHz under the avalanche phenomenon.

ISBN: 9781392263822Subjects--Topical Terms:

649834
Electrical engineering.

Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector.
LDR:03379nmm a2200337 4500 001 2263973
005 20200331094433.5
008 220629s2019 ||||||||||||||||| ||eng d
020 $a 9781392263822
035 $a (MiAaPQ)AAI13860931
035 $a (MiAaPQ)uml:10012
035 $a AAI13860931
040 $a MiAaPQ $c MiAaPQ
100 1 $a Kemsri, Thitikorn. $3 3541070
245 1 0 $a Metallic Circular Disk Optical Antenna of Surface Nano-Plasmonic Enhancement in Quantum Dot Infrared and GaAs P-I-N Photodetector.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2019
300 $a 109 p.
500 $a Source: Dissertations Abstracts International, Volume: 80-12, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Lu, Xuejun.
502 $a Thesis (Ph.D.)--University of Massachusetts Lowell, 2019.
506 $a This item must not be sold to any third party vendors.
520 $a In the semiconductor world, several kinds of detectors have been studied and invented for different usages. Such an infrared wavelength, researching the infrared photodetector has been continually investigated. Especially Quantum Dots Infrared Photodetectors (QDIPs) and P-I-N Photodetector (PIN), they will play significant roles in the light absorption by converting the photons into electrical signals.However, increasing the performance of the photodetector also has been researching until now. The one approach is Surface Plasmonic Resonance (SPR), which is an interaction between the metal and dielectric mediums leading to the electron oscillation, a resonant frequency with the strong electric field. In this proposal, the surface plasmonic structure was entirely fabricated into Metallic Circular Disk Antenna (MCDA) on the QDIPs and the GaAs PIN photodetector to induce the electron confinement and also electromagnetic field enhancement.The measurement took place in two sections by comparing the photodetectors with a plasmonic structure on the surface and none of the plasmonic structure as a reference. The first part was an angular dependence experiment by QDIPs to see the angular dependence corresponding to the MCDA. With the practical result of MCDA in QDIPs, the strong electric fields and current densities were a consequence of the plasmonic structures at larger incident angle 0, 30,45, and 60 degrees respectively in LWIR (7.6 um).The second part involved the nano-MCDA resulting in the fast response and induced E-field distribution of the GaAs PIN photodetector. Correlating with the nanoantenna on the GaAs PIN photodetector and a mode-lock femtosecond (fs) laser to frequency comb illumination, the surface plasmonic nanoantenna can bring about the faster response of the GaAs PIN than the reference in NWIR (850 nm) from 2.4 (GHz) to 4.2 GHz.Furthermore, we investigated the avalanche phenomenon on the GaAs PIN photodetector with the nanoantenna by implementing the high voltage (-27 to -30v.). The result came out: the nano-optical antenna can produce the enhancement for speed response in the harmonic frequency and the cut-off frequency from (2.4 GHz) to around 6 GHz under the avalanche phenomenon.
590 $a School code: 0111.
650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
650 4 $a Optics. $3 517925
690 $a 0544
690 $a 0652
690 $a 0752
710 2 $a University of Massachusetts Lowell. $b Electrical Engineering. $3 3541071
773 0 $t Dissertations Abstracts International $g 80-12B.
790 $a 0111
791 $a Ph.D.
792 $a 2019
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=13860931