Microelectronics, circuits and syste...
International Conference on Microelectronics, Circuits, and Systems (2020 :)

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  • Microelectronics, circuits and systems = select proceedings of 7th International Conference on Micro2020 /
  • 紀錄類型: 書目-電子資源 : Monograph/item
    正題名/作者: Microelectronics, circuits and systems/ edited by Abhijit Biswas, Raghvendra Saxena, Debashis De.
    其他題名: select proceedings of 7th International Conference on Micro2020 /
    其他題名: Micro2020
    其他作者: Biswas, Abhijit.
    團體作者: International Conference on Microelectronics, Circuits, and Systems
    出版者: Singapore :Springer Singapore : : 2021.,
    面頁冊數: x, 251 p. :ill., digital ;24 cm.
    內容註: Part 1: Advanced MOSFETs -- Chapter 1. High Switching Performance of Novel Heterogeneous Gate Dielectric - Hetero-material Based Junctionless-TFET -- Chapter 2. Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the presence of Trap Charges -- Chapter 3. High-K Biomolecule Sensor Based on L-shaped Tunnel FET -- Chapter 4. A Novel Trench FinFET as biosensor for early detection of Alzheimer's disease -- Chapter 5. Interface trap charge analysis of junctionless triple metal gate high-k gate all around nanowire FET based biotin biosensor for detection of cardiovascular diseases -- Chapter 6. Fin Aspect Ratio Optimization of Novel Junctionless Gate Stack Gate All Around (GS-GAA) FinFET for Analog/RF Applications -- Chapter 7. Design and Analysis of Cyl GAA-TFET based Cross-coupled Voltage Doubler Circuit -- Chapter 8. Impact of channel epilayer induced corner-effect on the sensing performance of a unique pTFET-based biosensor (epi-pTFET-biosensor) -- Chapter 9. Performance Comparison of III-V and Silicon FinFETs for Ultra Low Power VLSI Applications -- Part 2: Memory elements and circuits -- Chapter 10. Radiation Tolerant Memory Cell for Aerospace applications -- Chapter 11. A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM cell -- Chapter 12. Design and analysis of ultra-low power memory architecture with MTCMOS asymmetrical ground-gated 7T SRAM cell -- Chapter 13. Data Aware near Subthreshold 10T SRAM cell for ultra-low power application -- Chapter 14. Radiation Immune SRAM Cell for Deep Space Applications -- Part 3: HEMTs, MEMS and Photovoltaics -- Chapter 15. Comparative study of InAlN and InGaN Back Barrier layer on p-Gate/AlGaN/GaN HEMT.
    Contained By: Springer Nature eBook
    標題: Microelectronics - Congresses. -
    電子資源: https://doi.org/10.1007/978-981-16-1570-2
    ISBN: 9789811615702
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W9403278 電子資源 11.線上閱覽_V 電子書 EB TK7874 .I58 2020 一般使用(Normal) 在架 0
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