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Noise in nanoscale semiconductor devices

Grasser, Tibor.

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Noise in nanoscale semiconductor devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	Noise in nanoscale semiconductor devices/ edited by Tibor Grasser.
other author:	Grasser, Tibor.
Published:	Cham :Springer International Publishing : : 2020.,
Description:	vi, 729 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Semiconductors - Noise. -
Online resource:	https://doi.org/10.1007/978-3-030-37500-3
ISBN:	9783030375003

Noise in nanoscale semiconductor devices
Noise in nanoscale semiconductor devices[electronic resource] /edited by Tibor Grasser. - Cham :Springer International Publishing :2020. - vi, 729 p. :ill., digital ;24 cm.

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

ISBN: 9783030375003

Standard No.: 10.1007/978-3-030-37500-3doiSubjects--Topical Terms:

3451274
Semiconductors
--Noise.

LC Class. No.: TK7871.85 / .N657 2020

Dewey Class. No.: 621.3815

Noise in nanoscale semiconductor devices
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245 0 0 $a Noise in nanoscale semiconductor devices $h [electronic resource] / $c edited by Tibor Grasser.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a vi, 729 p. : $b ill., digital ; $c 24 cm.
520 $a This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
650 0 $a Semiconductors $x Noise. $3 3451274
650 1 4 $a Circuits and Systems. $3 896527
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
700 1 $a Grasser, Tibor. $3 2055812
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
856 4 0 $u https://doi.org/10.1007/978-3-030-37500-3
950 $a Engineering (Springer-11647)