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Charge transport in low dimensional ...

Camiola, Vito Dario.

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Charge transport in low dimensional semiconductor structures = the maximum entropy approach /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Charge transport in low dimensional semiconductor structures/ by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano.
其他題名:	the maximum entropy approach /
作者:	Camiola, Vito Dario.
其他作者:	Mascali, Giovanni.
出版者:	Cham :Springer International Publishing : : 2020.,
面頁冊數:	xvi, 337 p. :ill., digital ;24 cm.
內容註:	Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductor field-effect transistors. -
電子資源:	https://doi.org/10.1007/978-3-030-35993-5
ISBN:	9783030359935

Charge transport in low dimensional semiconductor structures = the maximum entropy approach /
Camiola, Vito Dario.

Charge transport in low dimensional semiconductor structuresthe maximum entropy approach /[electronic resource] :by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano. - Cham :Springer International Publishing :2020. - xvi, 337 p. :ill., digital ;24 cm. - The European consortium for mathematics in industry ;v.31. - European consortium for mathematics in industry ;v.31..

Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrodinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

ISBN: 9783030359935

Standard No.: 10.1007/978-3-030-35993-5doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.99.M44 / C365 2020

Dewey Class. No.: 621.38152

Charge transport in low dimensional semiconductor structures = the maximum entropy approach /
LDR:02811nmm a2200337 a 4500 001 2216451
003 DE-He213
005 20200721151506.0
006 m d
007 cr nn 008maaau
008 201120s2020 sz s 0 eng d
020 $a 9783030359935 $q (electronic bk.)
020 $a 9783030359928 $q (paper)
024 7 $a 10.1007/978-3-030-35993-5 $2 doi
035 $a 978-3-030-35993-5
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44 $b C365 2020
072 7 $a PHU $2 bicssc
072 7 $a SCI040000 $2 bisacsh
072 7 $a PHU $2 thema
082 0 4 $a 621.38152 $2 23
090 $a TK7871.99.M44 $b C183 2020
100 1 $a Camiola, Vito Dario. $3 3448800
245 1 0 $a Charge transport in low dimensional semiconductor structures $h [electronic resource] : $b the maximum entropy approach / $c by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a xvi, 337 p. : $b ill., digital ; $c 24 cm.
490 1 $a The European consortium for mathematics in industry ; $v v.31
505 0 $a Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.
520 $a This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrodinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 553297
650 0 $a Charge transfer. $3 604705
650 1 4 $a Mathematical Physics. $3 1542352
650 2 4 $a Theoretical, Mathematical and Computational Physics. $3 1066859
650 2 4 $a Mathematical and Computational Engineering. $3 3226306
650 2 4 $a Nanotechnology. $3 526235
700 1 $a Mascali, Giovanni. $3 3448801
700 1 $a Romano, Vittorio. $3 3448802
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a European consortium for mathematics in industry ; $v v.31. $3 3448803
856 4 0 $u https://doi.org/10.1007/978-3-030-35993-5
950 $a Mathematics and Statistics (Springer-11649)