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Interconnect Aging-Physics to Software.

Abbasinasab, Ali.

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Interconnect Aging-Physics to Software.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Interconnect Aging-Physics to Software./
作者:	Abbasinasab, Ali.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
面頁冊數:	177 p.
附註:	Source: Dissertations Abstracts International, Volume: 80-11, Section: B.
Contained By:	Dissertations Abstracts International80-11B.
標題:	Mathematics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10936875
ISBN:	9781392100066

Interconnect Aging-Physics to Software.
Abbasinasab, Ali.

Interconnect Aging-Physics to Software. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 177 p.

Source: Dissertations Abstracts International, Volume: 80-11, Section: B.

Thesis (Ph.D.)--University of California, Santa Barbara, 2018.

This item must not be sold to any third party vendors.

Device reliability or lifetime is often non-negotiable and crucial for sensitive applications such as medical devices, autonomous vehicles and space crafts. Inevitable technology advancement (e.g. miniaturization) has added unwelcome complications and unpredictability to the aging problem. Reliability of VLSI chips is jeopardized by mass transport in metallic interconnects. Material migration is caused by electrical, mechanical and thermal phenomena, and, therefore, is a complicated process. While all aspects of material migration have been studied, a comprehensive investigation that can explain and include all those phenomena simultaneously remains unsolved. Inaccuracies in modeling and predicting aging processes in wires cause that chipmakers often overdesign interconnects. This is an undesirable and expensive approach in terms of time and cost. In modern technologies, the predicted lifetime, aging, and failure mechanisms in interconnect very often do not match the observed behaviors. Unrealistic models used in CAD tools are the main culprit of such incompatibilities. In general, two situations may occur: (1) in some cases, the models may wrongly scrutinize reliability in unfailing parts and consequently impose unnecessary design tightening and (2) in some other cases, the models may underestimate serious reliability problems causing unpredicted behaviors or catastrophic failures to occur. The existing models for reliability evaluation are usually pessimistic in case of interconnect voiding and optimistic when extrusions occur. Time-consuming and not converging reliability assessments, as well as undesired chip behaviors, are the common expensive outcome of such models. We revisit the underlying physics of aging processes in dual-damascene copper lines. We demonstrate, that the simplistic modeling is the cause of the incompatibility of the existing models. We study all three main aging processes: electromigration, thermomigration, and stress migration and offer several comprehensive yet compact models for realistic assessment of interconnect aging. These models explain many observations that have been inexplicable for decades. Ultimately, a computer-aided design tool, RAIN, is developed based on the proposed models and is capable of assessing the reliability of industry standard complex multi-layer, multi-segment interconnect networks. This tool can be readily integrated into other verification signoffs phases such as performance, timing, and power analyses. RAIN takes as inputs: (1) interconnect design, (2) technology specifications, (3) initial stress and temperature, (4) IR drop and lifetime requirements. It analyzes and assesses reliability and delivery requirements of all nets, and provides a report on voltage limitations, thermal violations and expected lifetime. It is validated on a wide spectrum of experimental results performed on various industry benchmarks.

ISBN: 9781392100066Subjects--Topical Terms:

515831
Mathematics.

Interconnect Aging-Physics to Software.
LDR:04003nmm a2200337 4500 001 2207833
005 20190923114239.5
008 201008s2018 ||||||||||||||||| ||eng d
020 $a 9781392100066
035 $a (MiAaPQ)AAI10936875
035 $a (MiAaPQ)ucsb:14075
035 $a AAI10936875
040 $a MiAaPQ $c MiAaPQ
100 1 $a Abbasinasab, Ali. $3 3434834
245 1 0 $a Interconnect Aging-Physics to Software.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2018
300 $a 177 p.
500 $a Source: Dissertations Abstracts International, Volume: 80-11, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Marek-Sadowska, Malgorzata.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2018.
506 $a This item must not be sold to any third party vendors.
520 $a Device reliability or lifetime is often non-negotiable and crucial for sensitive applications such as medical devices, autonomous vehicles and space crafts. Inevitable technology advancement (e.g. miniaturization) has added unwelcome complications and unpredictability to the aging problem. Reliability of VLSI chips is jeopardized by mass transport in metallic interconnects. Material migration is caused by electrical, mechanical and thermal phenomena, and, therefore, is a complicated process. While all aspects of material migration have been studied, a comprehensive investigation that can explain and include all those phenomena simultaneously remains unsolved. Inaccuracies in modeling and predicting aging processes in wires cause that chipmakers often overdesign interconnects. This is an undesirable and expensive approach in terms of time and cost. In modern technologies, the predicted lifetime, aging, and failure mechanisms in interconnect very often do not match the observed behaviors. Unrealistic models used in CAD tools are the main culprit of such incompatibilities. In general, two situations may occur: (1) in some cases, the models may wrongly scrutinize reliability in unfailing parts and consequently impose unnecessary design tightening and (2) in some other cases, the models may underestimate serious reliability problems causing unpredicted behaviors or catastrophic failures to occur. The existing models for reliability evaluation are usually pessimistic in case of interconnect voiding and optimistic when extrusions occur. Time-consuming and not converging reliability assessments, as well as undesired chip behaviors, are the common expensive outcome of such models. We revisit the underlying physics of aging processes in dual-damascene copper lines. We demonstrate, that the simplistic modeling is the cause of the incompatibility of the existing models. We study all three main aging processes: electromigration, thermomigration, and stress migration and offer several comprehensive yet compact models for realistic assessment of interconnect aging. These models explain many observations that have been inexplicable for decades. Ultimately, a computer-aided design tool, RAIN, is developed based on the proposed models and is capable of assessing the reliability of industry standard complex multi-layer, multi-segment interconnect networks. This tool can be readily integrated into other verification signoffs phases such as performance, timing, and power analyses. RAIN takes as inputs: (1) interconnect design, (2) technology specifications, (3) initial stress and temperature, (4) IR drop and lifetime requirements. It analyzes and assesses reliability and delivery requirements of all nets, and provides a report on voltage limitations, thermal violations and expected lifetime. It is validated on a wide spectrum of experimental results performed on various industry benchmarks.
590 $a School code: 0035.
650 4 $a Mathematics. $3 515831
650 4 $a Computer Engineering. $3 1567821
650 4 $a Computer science. $3 523869
690 $a 0405
690 $a 0464
690 $a 0984
710 2 $a University of California, Santa Barbara. $b Electrical and Computer Engineering. $3 2095334
773 0 $t Dissertations Abstracts International $g 80-11B.
790 $a 0035
791 $a Ph.D.
792 $a 2018
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10936875