東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

The Role of Deep Level States in the...

Wisniewski, David.

Linked to FindBook

Google Book

Amazon

博客來

The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires.

Record Type:	Electronic resources : Monograph/item
Title/Author:	The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires./
Author:	Wisniewski, David.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
Description:	101 p.
Notes:	Source: Masters Abstracts International, Volume: 58-01.
Contained By:	Masters Abstracts International58-01(E).
Subject:	Materials science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10790524
ISBN:	9780438188143

The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires.
Wisniewski, David.

The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 101 p.

Source: Masters Abstracts International, Volume: 58-01.

Thesis (M.A.S.)--University of Toronto (Canada), 2018.

II-VI semiconductor nanostructures are excellent candidates for next-generation optoelectronic devices, including tunable emitters. ZnSe nanowires can be fabricated easily, and show promise in blue emission applications. However, their practicality is limited by deep level defect states that inhibit their performance. The primary objective of this thesis is to relate the defect structure to the optical and electronic properties of ZnSe nanowires. To this end, a heat treatment procedure to improve the microstructure was identified, and measurements were performed before and after the treatment. Using low temperature photoluminescence spectroscopy, the dominant recombination mechanisms were related to the total defect concentration. The carrier concentration and electron mobility were determined by electron transport measurements on single nanowire transistors. The measured experimental data was used to construct a model describing the type, energies, and ionized fractions of relevant defects, and develop an understanding of how ZnSe nanowires can be tailored for optoelectronic applications.

ISBN: 9780438188143Subjects--Topical Terms:

543314
Materials science.

The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires.
LDR:02049nmm a2200301 4500 001 2204950
005 20190718114218.5
008 201008s2018 ||||||||||||||||| ||eng d
020 $a 9780438188143
035 $a (MiAaPQ)AAI10790524
035 $a (MiAaPQ)toronto:17445
035 $a AAI10790524
040 $a MiAaPQ $c MiAaPQ
100 1 $a Wisniewski, David. $3 538578
245 1 4 $a The Role of Deep Level States in the Optical and Electronic Properties of ZnSe Nanowires.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2018
300 $a 101 p.
500 $a Source: Masters Abstracts International, Volume: 58-01.
500 $a Adviser: Harry E. Ruda.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2018.
520 $a II-VI semiconductor nanostructures are excellent candidates for next-generation optoelectronic devices, including tunable emitters. ZnSe nanowires can be fabricated easily, and show promise in blue emission applications. However, their practicality is limited by deep level defect states that inhibit their performance. The primary objective of this thesis is to relate the defect structure to the optical and electronic properties of ZnSe nanowires. To this end, a heat treatment procedure to improve the microstructure was identified, and measurements were performed before and after the treatment. Using low temperature photoluminescence spectroscopy, the dominant recombination mechanisms were related to the total defect concentration. The carrier concentration and electron mobility were determined by electron transport measurements on single nanowire transistors. The measured experimental data was used to construct a model describing the type, energies, and ionized fractions of relevant defects, and develop an understanding of how ZnSe nanowires can be tailored for optoelectronic applications.
590 $a School code: 0779.
650 4 $a Materials science. $3 543314
650 4 $a Electrical engineering. $3 649834
690 $a 0794
690 $a 0544
710 2 $a University of Toronto (Canada). $b Materials Science and Engineering. $3 2093675
773 0 $t Masters Abstracts International $g 58-01(E).
790 $a 0779
791 $a M.A.S.
792 $a 2018
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10790524