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Si detectors and characterization fo...
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Srivastava, Ajay Kumar.
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Si detectors and characterization for HEP and photon science experiment = how to design detectors by TCAD simulation /
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Si detectors and characterization for HEP and photon science experiment/ by Ajay Kumar Srivastava.
其他題名:
how to design detectors by TCAD simulation /
作者:
Srivastava, Ajay Kumar.
出版者:
Cham :Springer International Publishing : : 2019.,
面頁冊數:
xvii, 183 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
標題:
Radiation. -
電子資源:
https://doi.org/10.1007/978-3-030-19531-1
ISBN:
9783030195311
Si detectors and characterization for HEP and photon science experiment = how to design detectors by TCAD simulation /
Srivastava, Ajay Kumar.
Si detectors and characterization for HEP and photon science experiment
how to design detectors by TCAD simulation /[electronic resource] :by Ajay Kumar Srivastava. - Cham :Springer International Publishing :2019. - xvii, 183 p. :ill., digital ;24 cm.
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL.
ISBN: 9783030195311
Standard No.: 10.1007/978-3-030-19531-1doiSubjects--Topical Terms:
673904
Radiation.
LC Class. No.: QC474 / .S658 2019
Dewey Class. No.: 539.722
Si detectors and characterization for HEP and photon science experiment = how to design detectors by TCAD simulation /
LDR
:02037nmm a2200313 a 4500
001
2193351
003
DE-He213
005
20191224100516.0
006
m d
007
cr nn 008maaau
008
200514s2019 gw s 0 eng d
020
$a
9783030195311
$q
(electronic bk.)
020
$a
9783030195304
$q
(paper)
024
7
$a
10.1007/978-3-030-19531-1
$2
doi
035
$a
978-3-030-19531-1
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
QC474
$b
.S658 2019
072
7
$a
PHP
$2
bicssc
072
7
$a
SCI051000
$2
bisacsh
072
7
$a
PHP
$2
thema
082
0 4
$a
539.722
$2
23
090
$a
QC474
$b
.S774 2019
100
1
$a
Srivastava, Ajay Kumar.
$3
3414470
245
1 0
$a
Si detectors and characterization for HEP and photon science experiment
$h
[electronic resource] :
$b
how to design detectors by TCAD simulation /
$c
by Ajay Kumar Srivastava.
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2019.
300
$a
xvii, 183 p. :
$b
ill., digital ;
$c
24 cm.
520
$a
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL.
650
0
$a
Radiation.
$3
673904
650
0
$a
Silicon diodes.
$3
1002866
650
1 4
$a
Particle Acceleration and Detection, Beam Physics.
$3
893987
650
2 4
$a
Computer-Aided Engineering (CAD, CAE) and Design.
$3
892568
650
2 4
$a
Measurement Science and Instrumentation.
$3
1066390
650
2 4
$a
Solid State Physics.
$3
1066374
650
2 4
$a
Characterization and Evaluation of Materials.
$3
890988
650
2 4
$a
Nuclear Physics, Heavy Ions, Hadrons.
$3
894046
710
2
$a
SpringerLink (Online service)
$3
836513
773
0
$t
Springer eBooks
856
4 0
$u
https://doi.org/10.1007/978-3-030-19531-1
950
$a
Physics and Astronomy (Springer-11651)
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