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The MOS system

Engstrom, Olof.

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The MOS system

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	The MOS system/ Olof Engstrom.
作者:	Engstrom, Olof.
出版者:	Cambridge :Cambridge University Press, : 2014.,
面頁冊數:	355 p. :ill., digital ;24 cm.
標題:	Metal oxide semiconductors - Mathematical models. -
電子資源:	https://doi.org/10.1017/CBO9780511794490
ISBN:	9780511794490

The MOS system
Engstrom, Olof.

The MOS system[electronic resource] /Olof Engstrom. - Cambridge :Cambridge University Press,2014. - 355 p. :ill., digital ;24 cm.

This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.

ISBN: 9780511794490Subjects--Topical Terms:

865830
Metal oxide semiconductors
--Mathematical models.

LC Class. No.: TK7871.99.M44 / E54 2014

Dewey Class. No.: 621.381528

The MOS system
LDR:01828nmm a2200241 a 4500 001 2183002
003 UkCbUP
005 20151005020621.0
006 m d
007 cr nn 008maaau
008 191203s2014 enk o 1 0 eng d
020 $a 9780511794490 $q (electronic bk.)
020 $a 9781107005938 $q (paper)
035 $a CR9780511794490
040 $a UkCbUP $b eng $c UkCbUP $d GP
041 0 $a eng
050 4 $a TK7871.99.M44 $b E54 2014
082 0 4 $a 621.381528 $2 23
090 $a TK7871.99.M44 $b E58 2014
100 1 $a Engstrom, Olof. $3 3391865
245 1 4 $a The MOS system $h [electronic resource] / $c Olof Engstrom.
260 $a Cambridge : $b Cambridge University Press, $c 2014.
300 $a 355 p. : $b ill., digital ; $c 24 cm.
520 $a This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
650 0 $a Metal oxide semiconductors $x Mathematical models. $3 865830
650 0 $a Semiconductors $x Mathematical models. $3 652252
856 4 0 $u https://doi.org/10.1017/CBO9780511794490