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Novel Uses of Directly Patternable S...

Desai, Vishal.

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Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications./
Author:	Desai, Vishal.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
Description:	130 p.
Notes:	Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
Contained By:	Dissertation Abstracts International78-10B(E).
Subject:	Nanotechnology. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10282076
ISBN:	9781369813333

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
Desai, Vishal.

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 130 p.

Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2017.

Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.

ISBN: 9781369813333Subjects--Topical Terms:

526235
Nanotechnology.

Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
LDR:02350nmm a2200301 4500 001 2164404
005 20181106103642.5
008 190424s2017 ||||||||||||||||| ||eng d
020 $a 9781369813333
035 $a (MiAaPQ)AAI10282076
035 $a (MiAaPQ)sunyalb:12148
035 $a AAI10282076
040 $a MiAaPQ $c MiAaPQ
100 1 $a Desai, Vishal. $3 3352452
245 1 0 $a Novel Uses of Directly Patternable Silicon Oxide Based Resist for Advanced Patterning Applications.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2017
300 $a 130 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-10(E), Section: B.
500 $a Adviser: Dr. Nathaniel Cady.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2017.
520 $a Novel applications for the directly-patternable resist material, hydrogen silsesquioxane (HSQ), were studied for multiple advanced lithography techniques. Initially, electron beam lithography (EBL) patterned low-resolution HSQ patterns were demonstrated as a mandrel in a self-aligned double patterning (SADP) approach. Using the novel EBL-SADP approach, the number of total process steps was reduced, as compared to conventional SADP methods. This work provided proof-of-concept for using HSQ resist as a directly-patternable mandrel and plasma enhanced chemical vapor deposited (PECVD) low-stress silicon nitride (LSSiN) as a spacer. Furthermore, rapid thermal annealing (RTA) was demonstrated as a method to increase the spacer etch resistance in this novel EBL-SADP approach. Moreover, to transition towards high volume manufacturing, a commercial Extreme Ultra Violet (EUV) scanner was used to develop high-resolution HSQ patterning (18 to 10 nm) with a simplified patterning stack. Resolution of 10 nm lines on 21 nm spacing was obtained for sub-dense patterns and 18 nm dense patterns were partially resolved. Lastly, a novel HSQ based EUV-SADP approach was demonstrated, which provides a potential pathway towards obtaining resolution beyond the limitation of commercial EUV scanners (sub 15 nm dense), along with a reduction in total processing steps.
590 $a School code: 0668.
650 4 $a Nanotechnology. $3 526235
650 4 $a Nanoscience. $3 587832
690 $a 0652
690 $a 0565
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 78-10B(E).
790 $a 0668
791 $a Ph.D.
792 $a 2017
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10282076