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Optical characterization of nitride-...

Masui, Hisashi.

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Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications./
Author:	Masui, Hisashi.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2007,
Description:	283 p.
Notes:	Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.
Contained By:	Dissertation Abstracts International68-12B.
Subject:	Materials science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3291326
ISBN:	9780549363460

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
Masui, Hisashi.

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications. - Ann Arbor : ProQuest Dissertations & Theses, 2007 - 283 p.

Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.

Thesis (Ph.D.)--University of California, Santa Barbara, 2007.

This dissertation describes research dedicated to the solid-state lighting technology based on III-nitride light-emitting diodes (LEDs). Nitride semiconductors are rather an immature material system compared to conventional III-V semiconductors. As the solid-state lighting technology based on nitride optoelectronic devices becomes widely accepted in the market, solid-state technology is required to compete with the conventional vacuum lighting technology, especially in energy efficiency. In addition to such energy-efficiency requirements, solid-state optoelectronic devices have the potential to explore new applications based on their unique properties.

ISBN: 9780549363460Subjects--Topical Terms:

543314
Materials science.

Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
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100 1 $a Masui, Hisashi. $3 3348792
245 1 0 $a Optical characterization of nitride-based light-emitting diodes for solid-state lighting applications.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2007
300 $a 283 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-12, Section: B, page: 8325.
500 $a Advisers: Steven P. DenBaars; Shuji Nakamura.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2007.
520 $a This dissertation describes research dedicated to the solid-state lighting technology based on III-nitride light-emitting diodes (LEDs). Nitride semiconductors are rather an immature material system compared to conventional III-V semiconductors. As the solid-state lighting technology based on nitride optoelectronic devices becomes widely accepted in the market, solid-state technology is required to compete with the conventional vacuum lighting technology, especially in energy efficiency. In addition to such energy-efficiency requirements, solid-state optoelectronic devices have the potential to explore new applications based on their unique properties.
520 $a The research was conducted as a way of optical characterization of LEDs with a strong emphasis on electroluminescence. Device-packaging techniques were introduced in the early stage of the research to evaluate performances of discrete LEDs including phosphor-combined white-light emitting devices. Light extraction and white-LED fabrication were of direct interest in terms of solid-state lighting, which occupies a large part of the present dissertation. The suspended-LED technique was introduced to improve light extraction and the sphere package was invented as a result of the technique. A phosphor-combined sphere LED achieved as high as 117 lm/W of luminous efficacy.
520 $a Low-temperature characterization is important to evaluate light-emission efficiency of LEDs, especially the internal quantum efficiency. It was a generally known problem that electroluminescence efficiency deteriorates drastically at low temperature where photoluminescence efficiency remains high. High-quality LEDs prepared on GaN bulk substrates that became available during the present project contributed to the low-temperature study, largely to address the problem. Electroluminescence is related to carrier generation processes via low-temperature measurements on such high-quality LEDs. This study produced a model to explain electroluminescence efficiency by unifying temperature, current, and material-quality dependences. Spectral and electrical studies were carried out as well.
520 $a Polarized light emission was characterized on newly emerged nonpolar and semipolar LEDs. Angular characterization was a powerful method on semipolar LEDs. Results of such three-dimensional characterization were successfully related to the band structure of the hexagonal nitride system. Theoretical understanding and experimental observation of such polarized light emission discussed in this dissertation serves the foundation for indicating their potential for liquid-crystal display backlighting as one device application.
590 $a School code: 0035.
650 4 $a Materials science. $3 543314
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
690 $a 0794
690 $a 0544
690 $a 0611
710 2 $a University of California, Santa Barbara. $b Materials. $3 1034108
773 0 $t Dissertation Abstracts International $g 68-12B.
790 $a 0035
791 $a Ph.D.
792 $a 2007
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3291326