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Materials for giant spin Hall effect...

Jayanthinarasimham, Avyaya.

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Materials for giant spin Hall effect devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Materials for giant spin Hall effect devices./
作者:	Jayanthinarasimham, Avyaya.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
面頁冊數:	117 p.
附註:	Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.
Contained By:	Dissertation Abstracts International78-08B(E).
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10258516
ISBN:	9781369628463

Materials for giant spin Hall effect devices.
Jayanthinarasimham, Avyaya.

Materials for giant spin Hall effect devices. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 117 p.

Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2017.

Studies presented in this thesis are an effort to control the growth of beta W and explore the in-plane current induced effects in a beta W and CoFeB bilayer. Physical vapor deposited W films beyond 5 nm transform from beta to the stable bulk alpha phase. beta W films with 5 nm thickness when integrated with the other films for large scale fabrication presents a small process window for etch and deposition errors. Also, CoFeB on W does not generate perpendicular magnetic anisotropy (PMA) even when it is capped with MgOjTa(Capping) layers. The beta W with larger thickness process window and a CoFeB with PMA deposited on top of W is necessary for an ideal functioning spin Hall effect (SHE) device. This thesis will focus on overcoming the above mentioned challenges.

ISBN: 9781369628463Subjects--Topical Terms:

543314
Materials science.

Materials for giant spin Hall effect devices.
LDR:03833nmm a2200349 4500 001 2159569
005 20180703084420.5
008 190424s2017 ||||||||||||||||| ||eng d
020 $a 9781369628463
035 $a (MiAaPQ)AAI10258516
035 $a (MiAaPQ)sunyalb:12056
035 $a AAI10258516
040 $a MiAaPQ $c MiAaPQ
100 1 $a Jayanthinarasimham, Avyaya. $3 3347440
245 1 0 $a Materials for giant spin Hall effect devices.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2017
300 $a 117 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-08(E), Section: B.
500 $a Adviser: Vincent P. LaBella.
502 $a Thesis (Ph.D.)--State University of New York at Albany, 2017.
520 $a Studies presented in this thesis are an effort to control the growth of beta W and explore the in-plane current induced effects in a beta W and CoFeB bilayer. Physical vapor deposited W films beyond 5 nm transform from beta to the stable bulk alpha phase. beta W films with 5 nm thickness when integrated with the other films for large scale fabrication presents a small process window for etch and deposition errors. Also, CoFeB on W does not generate perpendicular magnetic anisotropy (PMA) even when it is capped with MgOjTa(Capping) layers. The beta W with larger thickness process window and a CoFeB with PMA deposited on top of W is necessary for an ideal functioning spin Hall effect (SHE) device. This thesis will focus on overcoming the above mentioned challenges.
520 $a 2 sccm of O2 gas was introduced during the growth of beta W, this resulted in thicker films with beta W. If a large amount of O2 was introduced, it resulted in complete oxidation and loss of crystallinity. Thus an optimum amount of oxygen is necessary. However, introducing O2 during the deposition can effect other metals present on the wafer, which is not ideal. N2 was utilized to achieve thicker beta W films. Upon introducing N with similar concentration of O, it lead to amorphization of W, thus revealing a kinetic control. A pulsed N2 of 1 sccm at 2-second period was used to kinetically control the growth of beta W. Both the techniques were able to grow beta W from 5 nm up to 20 nm thick films. Films with N-assisted growth exhibited lower resistance and higher metallic character.
520 $a 1 nm Ta, Mo and CoFe were used as insert layers between beta W and CoFeB to induce PMA. 1 nm Mo insert layer and 5 nm Mo under layer have largely different interfaces with CoFeB even when annealed in ultra high vacuum (UHV) environment. Thus, 1 nm Mo layer does not show any PMA. The CoFe insert layer adds to the bulk anisotropy and dominates the interface anisotropy, and does not lead to any PMA. The 1 nm Ta insert exhibits strong PMA in both as deposited and annealed condition. Hence, the stack SUB&mid; beta-W&mid;Ta&mid;CoFeB&mid;MgO&mid;Ta was deposited and patterned into a Hall bar device. The competition between external magnetic field and internal effective fields is demonstrated. An empirical model is developed to estimate the spin Hall angle (SHA). The SHA is estimated = 0.24 +/- 0.05 for the entire stack. Current induced switching of single ferromagnetic metal (FM) is also shown and the SHE symmetry is preserved.
520 $a The results presented in the thesis demonstrate the full capacity to integrate SHE materials like beta W in a 300 mm integrated circuit fabrication facility. A prototypical device is fabricated and studied. Along with the challenges which are inherent to the effect and some insights to overcome them and a future outlook.
590 $a School code: 0668.
650 4 $a Materials science. $3 543314
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Physics. $3 516296
690 $a 0794
690 $a 0611
690 $a 0605
710 2 $a State University of New York at Albany. $b Nanoscale Science and Engineering-Nanoscale Engineering. $3 1674751
773 0 $t Dissertation Abstracts International $g 78-08B(E).
790 $a 0668
791 $a Ph.D.
792 $a 2017
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10258516