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Exploring Magnetic Nanostructures Em...

Malladi, Machara Krishna Girish.

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Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers./
Author:	Malladi, Machara Krishna Girish.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2017,
Description:	106 p.
Notes:	Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.
Contained By:	Dissertation Abstracts International78-11B(E).
Subject:	Nanoscience. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10277500
ISBN:	9780355026955

Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers.
Malladi, Machara Krishna Girish.

Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 106 p.

Source: Dissertation Abstracts International, Volume: 78-11(E), Section: B.

Thesis (Ph.D.)--State University of New York at Albany, 2017.

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H+(range: ~850 nm; dose: 1.5x1016 cm-2)and Ni+ (range: ~60 nm; dose:2x1015 cm -2).Following annealing, the H implanted region populated with Ni nanoparticles of size (~ 10-25 nm) and density (~ 1011/cm2) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a defect-free crystalline Si layer exhibit a very high magnetic switching energy barrier of ~ 0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment The electrical transport properties of the samples exhibiting room temperature ferromagnetism have been measured in an in-plane magnetic field and these samples show a high room temperature magnetoresistance (~155% at 9T for p-Si and ~80% at 9T for n-Si) which is dependent on the temperature and the applied current. The peak in the magnetoresistance occurs in the ohmic regime, where the inhomogeneity is the least in these samples measured. Such magnetoresistance has been attributed to the spin-dependent of splitting of the bands in the presence of magnetic nanoparticles with large moments and Schottky junction properties. A large spin-splitting (on the order of 100-150 meV in p-Si and 65-80 meV in n-Si) has been estimated along with large g-factor of ~87 (p-Si) and ~40 (n-Si). The spin polarization values based on these measurements has been estimated to be ~99.6% in p-Si and ~95.70% in n-Si at room temperature. Such large spin polarization values show a great promise for this material system to be the base material for the demonstration of a Si-based room temperature spintronic device.

ISBN: 9780355026955Subjects--Topical Terms:

587832
Nanoscience.

Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon for Generation Of Spin-Polarized Carriers.
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520 $a Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H+(range: ~850 nm; dose: 1.5x1016 cm-2)and Ni+ (range: ~60 nm; dose:2x1015 cm -2).Following annealing, the H implanted region populated with Ni nanoparticles of size (~ 10-25 nm) and density (~ 1011/cm2) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a defect-free crystalline Si layer exhibit a very high magnetic switching energy barrier of ~ 0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment The electrical transport properties of the samples exhibiting room temperature ferromagnetism have been measured in an in-plane magnetic field and these samples show a high room temperature magnetoresistance (~155% at 9T for p-Si and ~80% at 9T for n-Si) which is dependent on the temperature and the applied current. The peak in the magnetoresistance occurs in the ohmic regime, where the inhomogeneity is the least in these samples measured. Such magnetoresistance has been attributed to the spin-dependent of splitting of the bands in the presence of magnetic nanoparticles with large moments and Schottky junction properties. A large spin-splitting (on the order of 100-150 meV in p-Si and 65-80 meV in n-Si) has been estimated along with large g-factor of ~87 (p-Si) and ~40 (n-Si). The spin polarization values based on these measurements has been estimated to be ~99.6% in p-Si and ~95.70% in n-Si at room temperature. Such large spin polarization values show a great promise for this material system to be the base material for the demonstration of a Si-based room temperature spintronic device.
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