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Semiconductor power devices = physic...

Lutz, Josef.

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Semiconductor power devices = physics, characteristics, reliability /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Semiconductor power devices/ by Josef Lutz ... [et al.].
其他題名:	physics, characteristics, reliability /
其他作者:	Lutz, Josef.
出版者:	Cham :Springer International Publishing : : 2018.,
面頁冊數:	xix, 714 p. :ill., digital ;24 cm.
內容註:	Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
Contained By:	Springer eBooks
標題:	Power semiconductors. -
電子資源:	http://dx.doi.org/10.1007/978-3-319-70917-8
ISBN:	9783319709178

Semiconductor power devices = physics, characteristics, reliability /
Semiconductor power devicesphysics, characteristics, reliability /[electronic resource] :by Josef Lutz ... [et al.]. - 2nd ed. - Cham :Springer International Publishing :2018. - xix, 714 p. :ill., digital ;24 cm.

Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

ISBN: 9783319709178

Standard No.: 10.1007/978-3-319-70917-8doiSubjects--Topical Terms:

1047981
Power semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Semiconductor power devices = physics, characteristics, reliability /
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505 0 $a Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520 $a This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
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