東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Analytical modelling of breakdown ef...

Ghadiry, Mahdiar.

FindBook

Google Book

Amazon

博客來

Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor/ by Iraj Sadegh Amiri, Mahdiar Ghadiry.
作者:	Amiri, Iraj Sadegh.
其他作者:	Ghadiry, Mahdiar.
出版者:	Singapore :Springer Singapore : : 2018.,
面頁冊數:	ix, 86 p. :ill., digital ;24 cm.
內容註:	Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.
Contained By:	Springer eBooks
標題:	Field-effect transistors - Materials. -
電子資源:	http://dx.doi.org/10.1007/978-981-10-6550-7
ISBN:	9789811065507

Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
Amiri, Iraj Sadegh.

Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor[electronic resource] /by Iraj Sadegh Amiri, Mahdiar Ghadiry. - Singapore :Springer Singapore :2018. - ix, 86 p. :ill., digital ;24 cm. - SpringerBriefs in applied sciences and technology,2191-530X. - SpringerBriefs in applied sciences and technology..

Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs) The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

ISBN: 9789811065507

Standard No.: 10.1007/978-981-10-6550-7doiSubjects--Topical Terms:

2133908
Field-effect transistors
--Materials.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
LDR:03027nmm a2200325 a 4500 001 2131756
003 DE-He213
005 20180619105357.0
006 m d
007 cr nn 008maaau
008 181005s2018 si s 0 eng d
020 $a 9789811065507 $q (electronic bk.)
020 $a 9789811065491 $q (paper)
024 7 $a 10.1007/978-981-10-6550-7 $2 doi
035 $a 978-981-10-6550-7
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TDPB $2 bicssc
072 7 $a TEC027000 $2 bisacsh
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .A517 2018
100 1 $a Amiri, Iraj Sadegh. $3 2132767
245 1 0 $a Analytical modelling of breakdown effect in graphene nanoribbon field effect transistor $h [electronic resource] / $c by Iraj Sadegh Amiri, Mahdiar Ghadiry.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a ix, 86 p. : $b ill., digital ; $c 24 cm.
490 1 $a SpringerBriefs in applied sciences and technology, $x 2191-530X
505 0 $a Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.
520 $a This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs) The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
650 0 $a Field-effect transistors $x Materials. $3 2133908
650 0 $a Graphene. $3 1569149
650 1 4 $a Engineering. $3 586835
650 2 4 $a Nanotechnology and Microengineering. $3 1005737
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Nanotechnology. $3 526235
700 1 $a Ghadiry, Mahdiar. $3 3297637
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a SpringerBriefs in applied sciences and technology. $3 1565541
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-6550-7
950 $a Engineering (Springer-11647)