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Research on the radiation effects an...

Sun, Yabin.

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Research on the radiation effects and compact model of SiGe HBT

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Research on the radiation effects and compact model of SiGe HBT/ by Yabin Sun.
作者:	Sun, Yabin.
出版者:	Singapore :Springer Singapore : : 2018.,
面頁冊數:	xxiv, 168 p. :ill., digital ;24 cm.
內容註:	Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
Contained By:	Springer eBooks
標題:	Bipolar transistors - Effect of radiation on. -
電子資源:	http://dx.doi.org/10.1007/978-981-10-4612-4
ISBN:	9789811046124

Research on the radiation effects and compact model of SiGe HBT
Sun, Yabin.

Research on the radiation effects and compact model of SiGe HBT[electronic resource] /by Yabin Sun. - Singapore :Springer Singapore :2018. - xxiv, 168 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

ISBN: 9789811046124

Standard No.: 10.1007/978-981-10-4612-4doiSubjects--Topical Terms:

3297594
Bipolar transistors
--Effect of radiation on.

LC Class. No.: TK7871.96.B55

Dewey Class. No.: 621.381528

Research on the radiation effects and compact model of SiGe HBT
LDR:01958nmm a2200337 a 4500 001 2131736
003 DE-He213
005 20180620144311.0
006 m d
007 cr nn 008maaau
008 181005s2018 si s 0 eng d
020 $a 9789811046124 $q (electronic bk.)
020 $a 9789811046117 $q (paper)
024 7 $a 10.1007/978-981-10-4612-4 $2 doi
035 $a 978-981-10-4612-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.96.B55
072 7 $a TJF $2 bicssc
072 7 $a TEC008000 $2 bisacsh
072 7 $a TEC008070 $2 bisacsh
082 0 4 $a 621.381528 $2 23
090 $a TK7871.96.B55 $b S957 2018
100 1 $a Sun, Yabin. $3 3297593
245 1 0 $a Research on the radiation effects and compact model of SiGe HBT $h [electronic resource] / $c by Yabin Sun.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a xxiv, 168 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
520 $a This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
650 0 $a Bipolar transistors $x Effect of radiation on. $3 3297594
650 0 $a Bipolar transistors $x Research. $3 3297595
650 0 $a Metal oxide semiconductors, Complementary $x Effect of radiation on. $3 3297596
650 1 4 $a Engineering. $3 586835
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Optical and Electronic Materials. $3 891120
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Solid State Physics. $3 1066374
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 1314442
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-4612-4
950 $a Engineering (Springer-11647)