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Research on the radiation effects an...

Sun, Yabin.

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Research on the radiation effects and compact model of SiGe HBT

Record Type:	Electronic resources : Monograph/item
Title/Author:	Research on the radiation effects and compact model of SiGe HBT/ by Yabin Sun.
Author:	Sun, Yabin.
Published:	Singapore :Springer Singapore : : 2018.,
Description:	xxiv, 168 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
Contained By:	Springer eBooks
Subject:	Bipolar transistors - Effect of radiation on. -
Online resource:	http://dx.doi.org/10.1007/978-981-10-4612-4
ISBN:	9789811046124

Research on the radiation effects and compact model of SiGe HBT
Sun, Yabin.

Research on the radiation effects and compact model of SiGe HBT[electronic resource] /by Yabin Sun. - Singapore :Springer Singapore :2018. - xxiv, 168 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

ISBN: 9789811046124

Standard No.: 10.1007/978-981-10-4612-4doiSubjects--Topical Terms:

3297594
Bipolar transistors
--Effect of radiation on.

LC Class. No.: TK7871.96.B55

Dewey Class. No.: 621.381528

Research on the radiation effects and compact model of SiGe HBT
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245 1 0 $a Research on the radiation effects and compact model of SiGe HBT $h [electronic resource] / $c by Yabin Sun.
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300 $a xxiv, 168 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.
520 $a This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
650 0 $a Bipolar transistors $x Effect of radiation on. $3 3297594
650 0 $a Bipolar transistors $x Research. $3 3297595
650 0 $a Metal oxide semiconductors, Complementary $x Effect of radiation on. $3 3297596
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650 2 4 $a Semiconductors. $3 516162
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650 2 4 $a Solid State Physics. $3 1066374
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856 4 0 $u http://dx.doi.org/10.1007/978-981-10-4612-4
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