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Developing ohmic contacts to gallium...
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Zhao, Shirong.
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Developing ohmic contacts to gallium nitride for high temperature applications.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Developing ohmic contacts to gallium nitride for high temperature applications./
作者:
Zhao, Shirong.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2016,
面頁冊數:
104 p.
附註:
Source: Dissertation Abstracts International, Volume: 77-12(E), Section: B.
Contained By:
Dissertation Abstracts International77-12B(E).
標題:
Electrical engineering. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10145446
ISBN:
9781369009729
Developing ohmic contacts to gallium nitride for high temperature applications.
Zhao, Shirong.
Developing ohmic contacts to gallium nitride for high temperature applications.
- Ann Arbor : ProQuest Dissertations & Theses, 2016 - 104 p.
Source: Dissertation Abstracts International, Volume: 77-12(E), Section: B.
Thesis (Ph.D.)--Arizona State University, 2016.
Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
ISBN: 9781369009729Subjects--Topical Terms:
649834
Electrical engineering.
Developing ohmic contacts to gallium nitride for high temperature applications.
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Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
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Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (rhoc) of 6x10-6 O˙cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in rhoc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial rhoc of 3x10 -4 O˙cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5x10-6 O˙cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10 -6 O˙cm2, with rhoc lowering for the non-alloyed contacts with high temperatures.
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The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both rhoc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed rhoc of 2x10 -3 O˙cm2 at room temperature, reduced to 1.6x10-4 O˙cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial rhoc [the resistivity of the ITO/p-GaN interface, since the metal/ITO rhoc is negligible] of 1x10 -2 O˙cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
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Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
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