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Developing ohmic contacts to gallium...

Zhao, Shirong.

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Developing ohmic contacts to gallium nitride for high temperature applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Developing ohmic contacts to gallium nitride for high temperature applications./
Author:	Zhao, Shirong.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2016,
Description:	104 p.
Notes:	Source: Dissertation Abstracts International, Volume: 77-12(E), Section: B.
Contained By:	Dissertation Abstracts International77-12B(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10145446
ISBN:	9781369009729

Developing ohmic contacts to gallium nitride for high temperature applications.
Zhao, Shirong.

Developing ohmic contacts to gallium nitride for high temperature applications. - Ann Arbor : ProQuest Dissertations & Theses, 2016 - 104 p.

Source: Dissertation Abstracts International, Volume: 77-12(E), Section: B.

Thesis (Ph.D.)--Arizona State University, 2016.

Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.

ISBN: 9781369009729Subjects--Topical Terms:

649834
Electrical engineering.

Developing ohmic contacts to gallium nitride for high temperature applications.
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020 $a 9781369009729
035 $a (MiAaPQ)AAI10145446
035 $a AAI10145446
040 $a MiAaPQ $c MiAaPQ
100 1 $a Zhao, Shirong. $3 3282446
245 1 0 $a Developing ohmic contacts to gallium nitride for high temperature applications.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2016
300 $a 104 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-12(E), Section: B.
500 $a Adviser: Srabanti Chowdhury.
502 $a Thesis (Ph.D.)--Arizona State University, 2016.
520 $a Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
520 $a Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (rhoc) of 6x10-6 O&dot;cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in rhoc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial rhoc of 3x10 -4 O&dot;cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5x10-6 O&dot;cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10 -6 O&dot;cm2, with rhoc lowering for the non-alloyed contacts with high temperatures.
520 $a The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both rhoc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed rhoc of 2x10 -3 O&dot;cm2 at room temperature, reduced to 1.6x10-4 O&dot;cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial rhoc [the resistivity of the ITO/p-GaN interface, since the metal/ITO rhoc is negligible] of 1x10 -2 O&dot;cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
520 $a Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
590 $a School code: 0010.
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
650 4 $a High temperature physics. $3 3192580
690 $a 0544
690 $a 0794
690 $a 0597
710 2 $a Arizona State University. $b Electrical Engineering. $3 1671741
773 0 $t Dissertation Abstracts International $g 77-12B(E).
790 $a 0010
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10145446