語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Chemical modification of silicon sur...
~
Vega Zendejas, Abraham.
FindBook
Google Book
Amazon
博客來
Chemical modification of silicon surfaces for shallow doping and growth of thin films.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Chemical modification of silicon surfaces for shallow doping and growth of thin films./
作者:
Vega Zendejas, Abraham.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2016,
面頁冊數:
107 p.
附註:
Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.
Contained By:
Dissertation Abstracts International77-11B(E).
標題:
Materials science. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10113853
ISBN:
9781339769103
Chemical modification of silicon surfaces for shallow doping and growth of thin films.
Vega Zendejas, Abraham.
Chemical modification of silicon surfaces for shallow doping and growth of thin films.
- Ann Arbor : ProQuest Dissertations & Theses, 2016 - 107 p.
Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.
Thesis (Ph.D.)--The University of Texas at Dallas, 2016.
Silicon remains the most important material for a host of applications including electronics, sensors, and even energy. Consequently, the modification of its surfaces and the ability to integrate other materials by thin film deposition are important. This proposal addresses two specific issues to help control these important processes. The first is the grafting of organic molecules and the subsequent use of these self-assembled monolayers to attempt to obtain shallow doping in silicon. This constitutes a novel approach that needs to be demonstrated and tested. The second is the deposition (or growth) of molybdenum nitride and molybdenum oxide films and the understanding of the mechanism behind that growth. There appears to be an urgent need in the industrial community for such films, given the versatility and the wide range of applications this compounds can provide. This work addresses the growth and characterization of these films, working closely with precursor providers to achieve this goal.
ISBN: 9781339769103Subjects--Topical Terms:
543314
Materials science.
Chemical modification of silicon surfaces for shallow doping and growth of thin films.
LDR
:01961nmm a2200301 4500
001
2120434
005
20170719065339.5
008
180830s2016 ||||||||||||||||| ||eng d
020
$a
9781339769103
035
$a
(MiAaPQ)AAI10113853
035
$a
AAI10113853
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Vega Zendejas, Abraham.
$3
3282367
245
1 0
$a
Chemical modification of silicon surfaces for shallow doping and growth of thin films.
260
1
$a
Ann Arbor :
$b
ProQuest Dissertations & Theses,
$c
2016
300
$a
107 p.
500
$a
Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.
500
$a
Adviser: Yves J. Chabal.
502
$a
Thesis (Ph.D.)--The University of Texas at Dallas, 2016.
520
$a
Silicon remains the most important material for a host of applications including electronics, sensors, and even energy. Consequently, the modification of its surfaces and the ability to integrate other materials by thin film deposition are important. This proposal addresses two specific issues to help control these important processes. The first is the grafting of organic molecules and the subsequent use of these self-assembled monolayers to attempt to obtain shallow doping in silicon. This constitutes a novel approach that needs to be demonstrated and tested. The second is the deposition (or growth) of molybdenum nitride and molybdenum oxide films and the understanding of the mechanism behind that growth. There appears to be an urgent need in the industrial community for such films, given the versatility and the wide range of applications this compounds can provide. This work addresses the growth and characterization of these films, working closely with precursor providers to achieve this goal.
590
$a
School code: 0382.
650
4
$a
Materials science.
$3
543314
650
4
$a
Physical chemistry.
$3
1981412
650
4
$a
Engineering.
$3
586835
690
$a
0794
690
$a
0494
690
$a
0537
710
2
$a
The University of Texas at Dallas.
$b
Materials Science and Engineering.
$3
3168649
773
0
$t
Dissertation Abstracts International
$g
77-11B(E).
790
$a
0382
791
$a
Ph.D.
792
$a
2016
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10113853
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9331052
電子資源
01.外借(書)_YB
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入