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Semi-parametric Bayesian Inference o...
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Liu, Xi.
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Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model./
作者:
Liu, Xi.
面頁冊數:
100 p.
附註:
Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
Contained By:
Dissertation Abstracts International77-07B(E).
標題:
Industrial engineering. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10024057
ISBN:
9781339516431
Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model.
Liu, Xi.
Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model.
- 100 p.
Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
Thesis (Ph.D.)--Ohio University, 2015.
Accelerated life testing (ALT) is commonly used to estimate the reliability of highly reliable products. This dissertation develops statistical models to predict useful life of nano devices with data collected under constant-stress ALT and step-stress ALT. As an example of nano devices, nc-MoOx embedded ZrHfO high-k dielectric thin film is studied with respect to its physical properties, failure mechanisms, and long-term stability. The devices used for ALT and reliability prediction demonstration have identical structure with this nc-MoOx embedded device.
ISBN: 9781339516431Subjects--Topical Terms:
526216
Industrial engineering.
Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model.
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Semi-parametric Bayesian Inference of Accelerated Life Test Using Dirichlet Process Mixture Model.
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Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
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Adviser: Tao Yuan.
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Thesis (Ph.D.)--Ohio University, 2015.
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Accelerated life testing (ALT) is commonly used to estimate the reliability of highly reliable products. This dissertation develops statistical models to predict useful life of nano devices with data collected under constant-stress ALT and step-stress ALT. As an example of nano devices, nc-MoOx embedded ZrHfO high-k dielectric thin film is studied with respect to its physical properties, failure mechanisms, and long-term stability. The devices used for ALT and reliability prediction demonstration have identical structure with this nc-MoOx embedded device.
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This research develops a semi-parametric Bayesian method to analyze ALT. The model assumes a log-linear lifetime-stress relationship, without assuming any parametric form of the failure-time distribution. The Dirichlet Weibull mixture model is employed to model the failure-time distribution under a given stress level. The model is fitted with a simulation-based algorithm, which implements Gibbs sampling to analyze ALT data and predicts the failure-time distribution at a normal stress level.
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Two practical examples related to the reliability of nanoelectronic devices are presented for constant-stress ALT, including one right-censored data and one complete data set. One right-censored practical example is demonstrated for simple step-stress ALT. All three examples illustrate the capability of the proposed methodology to provide accurate prediction of the failure-time distribution at a normal stress level.
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