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Mechanisms Responsible for Microwave...

Zhang, Shengke.

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Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials./
作者:	Zhang, Shengke.
面頁冊數:	107 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
Contained By:	Dissertation Abstracts International77-09B(E).
標題:	Materials science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10107120
ISBN:	9781339705224

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
Zhang, Shengke.

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials. - 107 p.

Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.

Thesis (Ph.D.)--Arizona State University, 2016.

Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (tau f) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, tauf, is related to three material parameters according to the equation, tau f = - (½ tauepsilon + ½ taumu + alphaL), where tauepsilon, taumu , and alphaL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for tau f. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators.

ISBN: 9781339705224Subjects--Topical Terms:

543314
Materials science.

Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
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245 1 0 $a Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials.
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500 $a Source: Dissertation Abstracts International, Volume: 77-09(E), Section: B.
500 $a Adviser: Nathan Newman.
502 $a Thesis (Ph.D.)--Arizona State University, 2016.
520 $a Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (tau f) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin of the observed magnetically-induced shifts in the dielectric resonator frequency originates from the same mechanism, as described by the Kramers-Kronig relations. The temperature coefficient of resonator frequency, tauf, is related to three material parameters according to the equation, tau f = - (½ tauepsilon + ½ taumu + alphaL), where tauepsilon, taumu , and alphaL are the temperature coefficient of dielectric constant, magnetic permeability, and lattice constant, respectively. Each of these parameters for dielectric materials of interest are measured experimentally. These results, in combination with density functional simulations, developed a much improved understanding of the fundamental mechanisms responsible for tau f. The same experimental methods have been used to characterize in-situ the physical nature and concentration of performance-degrading point defects in the dielectrics of superconducting planar microwave resonators.
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