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Charge-trapping non-volatile memorie...
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Dimitrakis, Panagiotis.
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Charge-trapping non-volatile memories.. Volume 2,. Emerging materials and structures
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Charge-trapping non-volatile memories./ edited by Panagiotis Dimitrakis.
其他題名:
Emerging materials and structures
其他作者:
Dimitrakis, Panagiotis.
出版者:
Cham :Springer International Publishing : : 2017.,
面頁冊數:
v, 211 p. :ill., digital ;24 cm.
內容註:
Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
Contained By:
Springer eBooks
標題:
Computer storage devices. -
電子資源:
http://dx.doi.org/10.1007/978-3-319-48705-2
ISBN:
9783319487052
Charge-trapping non-volatile memories.. Volume 2,. Emerging materials and structures
Charge-trapping non-volatile memories.
Volume 2,Emerging materials and structures[electronic resource] /Emerging materials and structuresedited by Panagiotis Dimitrakis. - Cham :Springer International Publishing :2017. - v, 211 p. :ill., digital ;24 cm.
Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
ISBN: 9783319487052
Standard No.: 10.1007/978-3-319-48705-2doiSubjects--Topical Terms:
649652
Computer storage devices.
LC Class. No.: TK7895.M4
Dewey Class. No.: 621.39732
Charge-trapping non-volatile memories.. Volume 2,. Emerging materials and structures
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