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Magnetic Topological Insulators and ...

Kou, Xufeng.

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Magnetic Topological Insulators and Quantum Anomalous Hall Effect.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Magnetic Topological Insulators and Quantum Anomalous Hall Effect./
Author:	Kou, Xufeng.
Description:	222 p.
Notes:	Source: Dissertation Abstracts International, Volume: 76-10(E), Section: B.
Contained By:	Dissertation Abstracts International76-10B(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3706156
ISBN:	9781321796766

Magnetic Topological Insulators and Quantum Anomalous Hall Effect.
Kou, Xufeng.

Magnetic Topological Insulators and Quantum Anomalous Hall Effect. - 222 p.

Source: Dissertation Abstracts International, Volume: 76-10(E), Section: B.

Thesis (Ph.D.)--University of California, Los Angeles, 2015.

The engineering of topological surface states is a key to realize applicable devices based on topological insulators (TIs). Among various proposals, introducing magnetic impurities into TIs has been proven to be an effective way to open a surface gap and integrate additional ferromagnetism with the original topological order. In this Dissertation, we study both the intrinsic electrical and magnetic properties of the magnetic TI thin films grown by molecular beam epitaxy. By doping transition element Cr into the host tetradymite-type V-VI semiconductors, we achieve robust ferromagnetic order with a strong perpendicular magnetic anisotropy. With additional top-gating capability, we realize the electric-field-controlled ferromagnetism in the magnetic TI systems, and demonstrate such magneto-electric effects can be effectively manipulated, depending on the interplays between the band topology, magnetic exchange coupling, and structural engineering.

ISBN: 9781321796766Subjects--Topical Terms:

649834
Electrical engineering.

Magnetic Topological Insulators and Quantum Anomalous Hall Effect.
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020 $a 9781321796766
035 $a (MiAaPQ)AAI3706156
035 $a AAI3706156
040 $a MiAaPQ $c MiAaPQ
100 1 $a Kou, Xufeng. $3 3193001
245 1 0 $a Magnetic Topological Insulators and Quantum Anomalous Hall Effect.
300 $a 222 p.
500 $a Source: Dissertation Abstracts International, Volume: 76-10(E), Section: B.
500 $a Adviser: Kang L. Wang.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 2015.
520 $a The engineering of topological surface states is a key to realize applicable devices based on topological insulators (TIs). Among various proposals, introducing magnetic impurities into TIs has been proven to be an effective way to open a surface gap and integrate additional ferromagnetism with the original topological order. In this Dissertation, we study both the intrinsic electrical and magnetic properties of the magnetic TI thin films grown by molecular beam epitaxy. By doping transition element Cr into the host tetradymite-type V-VI semiconductors, we achieve robust ferromagnetic order with a strong perpendicular magnetic anisotropy. With additional top-gating capability, we realize the electric-field-controlled ferromagnetism in the magnetic TI systems, and demonstrate such magneto-electric effects can be effectively manipulated, depending on the interplays between the band topology, magnetic exchange coupling, and structural engineering.
520 $a Most significantly, we report the observation of quantum anomalous Hall effect (QAHE) in the Cr-doped (BiSb)2Te3 samples where dissipationless chiral edge conduction is realized in the macroscopic millimeter-size devices without the presence of any external magnetic field, and the stability of the quantized Hall conductance of e2/h is well-maintained as the film thickness varies across the 2D hybridization limit. With additional quantum confinement, we discover the metal-to-insulator switching between two opposite QAHE states, and reveal the universal QAHE phase diagram in the thin magnetic TI samples.
520 $a In addition to the uniform magnetic TIs, we further investigate the TI/Cr-doped TI bilayer structures prepared by the modulation-doped growth method. By controlling the magnetic interaction profile, we observe the Dirac hole-mediated ferromagnetism and develop an effective way to manipulate its strength. Besides, the giant spin-orbit torque in such magnetic TI-based heterostructures enables us to demonstrate the current-induced magnetization switching with the critical current density much lower than other heavy metal/magnet systems. Our work on the magnetic TIs and their heterostructures thus unfolds new avenues for novel multifunctional nano-electronics and non-volatile spintronic applications.
590 $a School code: 0031.
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Quantum physics. $3 726746
690 $a 0544
690 $a 0611
690 $a 0599
710 2 $a University of California, Los Angeles. $b Electrical Engineering. $3 2094815
773 0 $t Dissertation Abstracts International $g 76-10B(E).
790 $a 0031
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3706156