語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Superconducting proximity effect in ...
~
Chang, Willy.
FindBook
Google Book
Amazon
博客來
Superconducting proximity effect in InAs nanowires.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Superconducting proximity effect in InAs nanowires./
作者:
Chang, Willy.
面頁冊數:
193 p.
附註:
Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.
Contained By:
Dissertation Abstracts International76-03B(E).
標題:
Low temperature physics. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3644968
ISBN:
9781321334388
Superconducting proximity effect in InAs nanowires.
Chang, Willy.
Superconducting proximity effect in InAs nanowires.
- 193 p.
Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.
Thesis (Ph.D.)--Harvard University, 2014.
First discovered by Holm and Meissner in 1932, the superconducting proximity effect has remained a subject of experimental and theoretical interest. In recent years, it has been proposed that proximity effect in a semiconductor with large g-factor and spin-orbit coupling could lead to exotic phases of superconductivity. This thesis focuses on proximity effect in one of the prime semiconductor candidates---InAs nanowires.
ISBN: 9781321334388Subjects--Topical Terms:
3173917
Low temperature physics.
Superconducting proximity effect in InAs nanowires.
LDR
:03179nmm a2200301 4500
001
2077350
005
20161114130258.5
008
170521s2014 ||||||||||||||||| ||eng d
020
$a
9781321334388
035
$a
(MiAaPQ)AAI3644968
035
$a
AAI3644968
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Chang, Willy.
$3
3192852
245
1 0
$a
Superconducting proximity effect in InAs nanowires.
300
$a
193 p.
500
$a
Source: Dissertation Abstracts International, Volume: 76-03(E), Section: B.
500
$a
Adviser: Amir Yacoby.
502
$a
Thesis (Ph.D.)--Harvard University, 2014.
520
$a
First discovered by Holm and Meissner in 1932, the superconducting proximity effect has remained a subject of experimental and theoretical interest. In recent years, it has been proposed that proximity effect in a semiconductor with large g-factor and spin-orbit coupling could lead to exotic phases of superconductivity. This thesis focuses on proximity effect in one of the prime semiconductor candidates---InAs nanowires.
520
$a
The first set of experiments investigates the superconducting phase-dependent tunneling spectrum of a proximitized InAs quantum dot. We observe tunneling resonances of Andreev bound states in the Kondo regime, and induce quantum phase transitions of the quantum dot ground state with gate voltage and phase bias---the latter being the first experimental observation of its kind. An additional zero-bias peak of unknown origin is observed to coexist with the Andreev bounds states. The second set of experiments extends upon the first with sharper tunneling resonances and an increase in the device critical field. By applying an external magnetic field, we observe spin-resolved Andreev bound states in proximitized InAs quantum dots. From the linear splitting of the tunneling resonances, we extract g-factors of 5 and 10 in two different devices.
520
$a
The third set of experiments utilizes a novel type of epitaxial core-shell InAs-Al nanowire. We compare the induced gaps of these nanowires with control devices proximitized with evaporated Al films. Our results show that the epitaxial core-shell nanowires possess a much harder induced gap---up to two orders of magnitude in sub-gap conductance suppression as compared to a factor of five in evaporated control devices. This observation suggests that roughness in S-N interfaces plays a crucial role in the quality of the proximity effect.
520
$a
The fourth set of experiments investigates the gate-tunability of epitaxial half-shell nanowires. In a half-shell nanowire Josephson junction, we measure the normal state resistance, maximum supercurrent, and magnetic field-dependent supercurrent interference patterns. The gate dependences of these independent experimental parameters are consistent with one another and indicate that an InAs nanowire in good ohmic contact to a thin sliver of Al retains its proximity effect and is gate-tunable.
590
$a
School code: 0084.
650
4
$a
Low temperature physics.
$3
3173917
690
$a
0598
710
2
$a
Harvard University.
$b
Physics.
$3
2094825
773
0
$t
Dissertation Abstracts International
$g
76-03B(E).
790
$a
0084
791
$a
Ph.D.
792
$a
2014
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3644968
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9310218
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入