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Simulation of High-Frequency Scaling...

Bateman, James Daniel.

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Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor./
作者:	Bateman, James Daniel.
面頁冊數:	129 p.
附註:	Source: Masters Abstracts International, Volume: 55-05.
Contained By:	Masters Abstracts International55-05(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10129875
ISBN:	9781339877396

Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor.
Bateman, James Daniel.

Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor. - 129 p.

Source: Masters Abstracts International, Volume: 55-05.

Thesis (M.A.S.)--University of Toronto (Canada), 2016.

This thesis investigates high-frequency scaling of advanced Silicon UTBB-FDSOI MOSFETs using semi-classical and ab initio NEGF simulations for the first time. Similarly, new ab initio NEGF simulations of the novel post-CMOS Au metal-channel FET are presented along side fabrication experiments towards testing simulation accuracy.

ISBN: 9781339877396Subjects--Topical Terms:

649834
Electrical engineering.

Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor.
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245 1 0 $a Simulation of High-Frequency Scaling of Silicon MOSFETs and the Golden Transistor.
300 $a 129 p.
500 $a Source: Masters Abstracts International, Volume: 55-05.
500 $a Adviser: Sorin P. Voinigescu.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2016.
520 $a This thesis investigates high-frequency scaling of advanced Silicon UTBB-FDSOI MOSFETs using semi-classical and ab initio NEGF simulations for the first time. Similarly, new ab initio NEGF simulations of the novel post-CMOS Au metal-channel FET are presented along side fabrication experiments towards testing simulation accuracy.
520 $a Ab initio NEGF simulations predict short channel effects to be suppressed down to LG=2nm, T Si=1.2nm, with improved ION by 80% and gm by 308% to compared to 24nm UTBB-FDSOI MOSFET measurements. Semi-classical simulations predict improvements of 46% in gm and 75% in fT for scaling down to LG=9.7nm, TSi =3.1nm.
520 $a The Au METFET shows no significant ION/IOFF with results being sensitive to simulation model choice. A complete METFET fabrication process flow is presented to test simulation accuracy and the smallest metal channel width ever fabricated using EBL at the University of Toronto is demonstrated at 9nm.
590 $a School code: 0779.
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
650 4 $a Condensed matter physics. $3 3173567
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710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 2096349
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