東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Graphene-Boron Nitride Heterostructu...

Gao, Yuanda.

FindBook

Google Book

Amazon

博客來

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects./
作者:	Gao, Yuanda.
面頁冊數:	117 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
Contained By:	Dissertation Abstracts International77-07B(E).
標題:	Optics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10009871
ISBN:	9781339462684

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects.
Gao, Yuanda.

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects. - 117 p.

Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.

Thesis (Ph.D.)--Columbia University, 2016.

Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects.

ISBN: 9781339462684Subjects--Topical Terms:

517925
Optics.

Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects.
LDR:02899nmm a2200325 4500 001 2077098
005 20161114130222.5
008 170521s2016 ||||||||||||||||| ||eng d
020 $a 9781339462684
035 $a (MiAaPQ)AAI10009871
035 $a AAI10009871
040 $a MiAaPQ $c MiAaPQ
100 1 $a Gao, Yuanda. $3 3192588
245 1 0 $a Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects.
300 $a 117 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
500 $a Adviser: James Hone.
502 $a Thesis (Ph.D.)--Columbia University, 2016.
520 $a Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects.
520 $a After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz.
520 $a On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed.
520 $a The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.
590 $a School code: 0054.
650 4 $a Optics. $3 517925
650 4 $a Physics. $3 516296
650 4 $a Materials science. $3 543314
690 $a 0752
690 $a 0605
690 $a 0794
710 2 $a Columbia University. $b Mechanical Engineering. $3 1684265
773 0 $t Dissertation Abstracts International $g 77-07B(E).
790 $a 0054
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10009871