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Auger line shape analysis as a monit...

Butler, John Robert.

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Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111).

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111)./
作者:	Butler, John Robert.
面頁冊數:	191 p.
附註:	Source: Dissertation Abstracts International, Volume: 53-03, Section: B, page: 1440.
Contained By:	Dissertation Abstracts International53-03B.
標題:	Condensed matter physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9223088

Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111).
Butler, John Robert.

Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111). - 191 p.

Source: Dissertation Abstracts International, Volume: 53-03, Section: B, page: 1440.

Thesis (Ph.D.)--Arizona State University, 1992.

A technique for quantitative Auger line shape analysis is introduced. This technique is used to monitor the reaction of thin films of Ni on Si(111). Variations in the Si LVV and Ni MVV Auger line shapes are used to obtain relative abundances of various Ni silicides at the surface of the films. To do this, Auger spectra of known bulk silicides are used as references.Subjects--Topical Terms:

3173567
Condensed matter physics.

Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111).
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100 1 $a Butler, John Robert. $3 3186151
245 1 0 $a Auger line shape analysis as a monitor of thin film reactions: Nickel/silicon(111).
300 $a 191 p.
500 $a Source: Dissertation Abstracts International, Volume: 53-03, Section: B, page: 1440.
502 $a Thesis (Ph.D.)--Arizona State University, 1992.
520 $a A technique for quantitative Auger line shape analysis is introduced. This technique is used to monitor the reaction of thin films of Ni on Si(111). Variations in the Si LVV and Ni MVV Auger line shapes are used to obtain relative abundances of various Ni silicides at the surface of the films. To do this, Auger spectra of known bulk silicides are used as references.
520 $a A systematic range of coverages of Ni was deposited at room temperature. Some were then annealed at roughly 30$\sp\circ$C intervals. Auger spectra were then taken at each coverage for each temperature, and a phase formation diagram was compiled.
520 $a For all coverages NiSi$\sb2$ is the result at 600$\sp\circ$C, and NiSi and Ni$\sb2$Si are found as components at lower temperatures. Two distinct Auger line shapes are found for the disilicides at 600$\sp\circ$C. Such a distinction has not been reported before. A higher coverage line shape corresponds to that of bulk NiSi$\sb2$, while one for lower coverages is distinct from that of any bulk silicide, and is presumed to come from a silicon bilayer covering the disilicide (111) surface. Another new observation is that silicon segregates to the surface at lower temperatures for the high coverage disilicide than for the lower coverage one.
520 $a At room temperature Ni was found for the first time to form NiSi$\sb2$ up to one monolayer, followed by Ni$\sb2$Si. After about 10 Angstroms of deposition, unreacted Ni starts to grow. The same progression was observed for growth on amorphous silicon, indicating that nucleation of NiSi$\sb2$ is not dependant on its epitaxial match to silicon.
590 $a School code: 0010.
650 4 $a Condensed matter physics. $3 3173567
690 $a 0611
710 2 $a Arizona State University. $3 1017445
773 0 $t Dissertation Abstracts International $g 53-03B.
790 $a 0010
791 $a Ph.D.
792 $a 1992
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9223088