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SURFACE ELECTRONIC STRUCTURE INVESTI...

GIGNAC, WILLIAM JOSEPH.

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SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY).

Record Type:	Electronic resources : Monograph/item
Title/Author:	SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY)./
Author:	GIGNAC, WILLIAM JOSEPH.
Description:	233 p.
Notes:	Source: Dissertation Abstracts International, Volume: 45-09, Section: B, page: 2931.
Contained By:	Dissertation Abstracts International45-09B.
Subject:	Physical chemistry. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=8428516

SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY).
GIGNAC, WILLIAM JOSEPH.

SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY). - 233 p.

Source: Dissertation Abstracts International, Volume: 45-09, Section: B, page: 2931.

Thesis (Ph.D.)--University of California, Los Angeles, 1984.

Two different systems were investigated for this thesis. In the first study, a nickel silicide with the probable stoichiometry NiSi(,2) was grown epitaxially on the (001) surface of a Si single crystal by depositing 20-26 (ANGSTROM) of elemental Ni on the Si surface and heating to 750(DEGREES)C. The low energy electron diffraction pattern of the silicide is consistent with a 5 x 1 surface reconstruction in two perpendicular domains. From electron energy loss data, the bulk plasmon energies of Si and NiSi(,2) were found to be 17.6 (+OR-) .2 and 20.0 (+OR-) .03 eV, respectively. This difference in the energies of the bulk plasmons suggests that electron energy loss may be a useful analytical technique for identifying the various transition metal silicides in particular and other reaction products at surfaces in general. An impurity stabilized Si (001) surface with less than 1.5% Ni that displayed one-eighth order diffraction beams was also observed. Comparison of the energy loss data for the clean and impurity stabilized surfaces of Si (001) provide evidence for two surface states of clean Si (001) that were previously unassigned. The second system studied was the (1102) surface of sapphire. X-ray photoelectron and electron energy loss spectroscopies were employed to investigate the valence and conduction band densities-of-states of that surface. The photoemission spectrum of the valence band region was adjusted to remove cross-section effects and compared to the recent theoretical density-of-states calculated by Ciraci and Batra. The energy loss data were used to determine the bulk plasmon energy of sapphire, 24.0 (+OR-) .3 eV, as well as the locations of eight regions of high conduction band state density within 20 eV above the conduction band minimum. One of these regions is an empty surface state 4.0 eV below the conduction band minimum. Several high binding energy satellites in the XPS core level spectra are reported and interpreted in terms of photoelectron energy losses to plasmons and interband transitions.Subjects--Topical Terms:

1981412
Physical chemistry.

SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY).
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245 1 0 $a SURFACE ELECTRONIC STRUCTURE INVESTIGATIONS OF SAPPHIRE AND EPITAXIAL NICKEL-SILICIDE ON SILICON (ELECTRON SPECTROSCOPY).
300 $a 233 p.
500 $a Source: Dissertation Abstracts International, Volume: 45-09, Section: B, page: 2931.
502 $a Thesis (Ph.D.)--University of California, Los Angeles, 1984.
520 $a Two different systems were investigated for this thesis. In the first study, a nickel silicide with the probable stoichiometry NiSi(,2) was grown epitaxially on the (001) surface of a Si single crystal by depositing 20-26 (ANGSTROM) of elemental Ni on the Si surface and heating to 750(DEGREES)C. The low energy electron diffraction pattern of the silicide is consistent with a 5 x 1 surface reconstruction in two perpendicular domains. From electron energy loss data, the bulk plasmon energies of Si and NiSi(,2) were found to be 17.6 (+OR-) .2 and 20.0 (+OR-) .03 eV, respectively. This difference in the energies of the bulk plasmons suggests that electron energy loss may be a useful analytical technique for identifying the various transition metal silicides in particular and other reaction products at surfaces in general. An impurity stabilized Si (001) surface with less than 1.5% Ni that displayed one-eighth order diffraction beams was also observed. Comparison of the energy loss data for the clean and impurity stabilized surfaces of Si (001) provide evidence for two surface states of clean Si (001) that were previously unassigned. The second system studied was the (1102) surface of sapphire. X-ray photoelectron and electron energy loss spectroscopies were employed to investigate the valence and conduction band densities-of-states of that surface. The photoemission spectrum of the valence band region was adjusted to remove cross-section effects and compared to the recent theoretical density-of-states calculated by Ciraci and Batra. The energy loss data were used to determine the bulk plasmon energy of sapphire, 24.0 (+OR-) .3 eV, as well as the locations of eight regions of high conduction band state density within 20 eV above the conduction band minimum. One of these regions is an empty surface state 4.0 eV below the conduction band minimum. Several high binding energy satellites in the XPS core level spectra are reported and interpreted in terms of photoelectron energy losses to plasmons and interband transitions.
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